Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | APOBEC3A | P31941 | 1/20 | 0.46 |
| ▸ | APOBEC3G | Q9HC16 | 1/20 | 0.46 |
| ▸ | SMN1; SMN2 | Q16637 | 4/20 | 0.44 |
| ▸ | HTT | P42858 | 3/20 | 0.44 |
| ▸ | KDM4E | B2RXH2 | 2/20 | 0.44 |
| ▸ | CYP19A1 | P11511 | 1/20 | 0.43 |
| ▸ | MAPT | P10636 | 3/20 | 0.43 |
| ▸ | NPC1 | O15118 | 1/20 | 0.42 |
| ▸ | RAB9A | P51151 | 1/20 | 0.42 |
| ▸ | GAA | P10253 | 2/20 | 0.40 |
| ▸ | MEN1 | O00255 | 4/20 | 0.39 |
| ▸ | KMT2A | Q03164 | 4/20 | 0.39 |
| ▸ | HSD11B1 | P28845 | 1/20 | 0.36 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.35 |
| ▸ | LIPA | P38571 | 1/20 | 0.35 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.34 |
| ▸ | KCNH2 | Q12809 | 1/20 | 0.34 |
| ▸ | HRH3 | Q9Y5N1 | 1/20 | 0.34 |
| ▸ | TSHR | P16473 | 1/20 | 0.34 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.34 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL18253412 | 0.89 | APOBEC3A (0.35) | APOBEC3AAPOBEC3GSMN1; SMN2HTTKDM4E | |
| SCHEMBL10900145 | 0.88 | CHRM2 (0.38) | SMN1; SMN2KDM4ECYP19A1GAAMEN1 | |
| SCHEMBL12326349 | 0.87 | APOBEC3A (0.43) | APOBEC3AAPOBEC3GSMN1; SMN2HTTKDM4E | |
| SCHEMBL17515458 | 0.87 | APOBEC3A (0.35) | APOBEC3AAPOBEC3GSMN1; SMN2HTTKDM4E | |
| SCHEMBL18253345 | 0.84 | APOBEC3A (0.32) | APOBEC3AAPOBEC3GSMN1; SMN2HTTKDM4E | |
| SCHEMBL16787975 | 0.83 | CHRM2 (0.35) | APOBEC3AAPOBEC3GSMN1; SMN2HTTKDM4E | |
| SCHEMBL1627279 | 0.83 | APOBEC3A (0.33) | APOBEC3AAPOBEC3GSMN1; SMN2HTTKDM4E | |
| SCHEMBL18253325 | 0.83 | APOBEC3A (0.35) | APOBEC3AAPOBEC3GSMN1; SMN2HTTKDM4E | |
| SCHEMBL18253332 | 0.83 | CHRM2 (0.33) | APOBEC3AAPOBEC3GSMN1; SMN2HTTKDM4E | |
| SCHEMBL1628101 | 0.82 | MAPT (0.47) | APOBEC3AAPOBEC3GSMN1; SMN2HTTKDM4E |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 42 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11795334-B2 | Photo-curable ink composition and method for forming image | FUJIFILM CORPORATION (JP) | 2023-10-24 | — | — | US | disclosed |
| US-20180175299-A1 | ORGANIC THIN FILM TRANSISTOR, METHOD OF MANUFACTURING ORGANIC THIN FILM TRANSISTOR, ORGANIC SEMICONDUCTOR COMPOSITION, ORGANIC SEMICONDUCTOR FILM, AND METHOD OF MANUFACTURING ORGANIC SEMICONDUCTOR FILM | FUJIFILM CORPORATION (JP) | 2018-06-21 | — | — | US | disclosed |
| US-20180162979-A1 | PHOTOSENSITIVE COMPOSITION, IMAGE FORMING METHOD, FILM FORMING METHOD, RESIN, IMAGE, AND FILM | FUJIFILM CORPORATION (JP) | 2018-06-14 | — | — | US | disclosed |
| US-20180051149-A1 | HARDCOAT FILM, POLARIZING PLATE, AND TOUCH PANEL DISPLAY | FUJIFILM CORPORATION (JP) | 2018-02-22 | — | — | US | disclosed |
| US-9718976-B2 | Ink composition for inkjet recording, inkjet recording method, and printed matter | FUJIFILM CORPORATION (JP) | 2017-08-01 | — | — | US | disclosed |
| US-9612535-B2 | Pattern forming method, electron beam- or extreme ultraviolet-sensitive resin composition, resist film using the same, method of manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2017-04-04 | — | — | US | disclosed |
| US-9568824-B2 | Actinic-ray- or radiation-sensitive resin composition, resist film therefrom and method of forming pattern therewith | FUJIFILM CORPORATION (JP) | 2017-02-14 | — | — | US | disclosed |
| US-9441127-B2 | Polymerizable composition, ink composition for ink-jet recording, method of ink-jet recording, and printed article | FUJIFILM CORPORATION (JP) | 2016-09-13 | — | — | US | disclosed |
| US-9429840-B2 | Pattern forming method, composition used therein, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2016-08-30 | — | — | US | disclosed |
| US-9405197-B2 | Pattern forming method, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2016-08-02 | — | — | US | disclosed |
| US-20110014570-A1 | RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2011-01-20 | — | — | US | disclosed |
| US-20110007123-A1 | THERMAL TRANSFER SHEET AND IMAGE FORMATION METHOD USING SAME | FUJIFILM CORPORATION (JP) | 2011-01-13 | — | — | US | disclosed |
| US-7785767-B2 | photoresist films suitable for immersion exposure, comprising non-aromatic olefin polymers, acid generators, solvents and acrylic polymers or vinyl ether polymers, having good followability for water, improved profile and pattern collapse | FUJIFILM CORPORATION (JP) | 2010-08-31 | — | — | US | disclosed |
| US-7666574-B2 | Positive resist composition and pattern forming method | FUJIFILM CORPORATION (JP) | 2010-02-23 | — | — | US | disclosed |
| US-20100015554-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2010-01-21 | — | — | US | disclosed |
| US-7550250-B2 | Resin having a monocyclic or polycyclic alicyclic hydrocarbon structure, of which solubility in an alkali developer increases under an action of an acid, a photoacid generator, methacrylic resins having hydrolysable ester groups and solvent; profiles; pattern collapse; immersion exposure; ARF lasers | FUJIFILM CORPORATION (JP) | 2009-06-23 | — | — | US | disclosed |
| US-20090136878-A1 | TOPCOAT COMPOSITION, ALKALI DEVELOPER-SOLUBLE TOPCOAT FILM USING THE COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2009-05-28 | — | — | US | disclosed |
| US-20090098485-A1 | photoresist films suitable for immersion exposure, comprising non-aromatic olefin polymers, acid generators, solvents and acrylic polymers or vinyl ether polymers, having good followability for water, improved profile and pattern collapse | FUJIFILM CORPORATION (JP) | 2009-04-16 | — | — | US | disclosed |
| US-20080241746-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2008-10-02 | — | — | US | disclosed |
| US-20070148595-A1 | Resin having a monocyclic or polycyclic alicyclic hydrocarbon structure, of which solubility in an alkali developer increases under an action of an acid, a photoacid generator, methacrylic resins having hydrolysable ester groups and solvent; profiles; pattern collapse; immersion exposure; ARF lasers | FUJIFILM CORPORATION (JP) | 2007-06-28 | — | — | US | disclosed |