SCHEMBL1001653

SCHEMBL1001653

CN(C)[GeH2]N(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Hydrochloric Acid SCHEMBL2960401 0.94
Hydrochloric Acid SCHEMBL4659758 0.67
SCHEMBL9148808 0.62
SCHEMBL23451809 0.59
SCHEMBL4886503 0.54
Trimethylammonium SCHEMBL5310222 0.53
Trimethylammonium SCHEMBL13989274 0.53
Trimethylammonium SCHEMBL1331060 0.53
Trimethylammonium SCHEMBL5582 0.53
Trimethylammonium SCHEMBL284438 0.53

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 45 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7141488-B2 Method of depositing germanium-containing films ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2006-11-28 US claimed
US-20260114191-A1 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS TOKYO ELECTRON LTD (JP) 2026-04-23 US disclosed
US-20260110080-A1 METHOD OF DEPOSITING FILM TOKYO ELECTRON LTD (JP) 2026-04-23 US disclosed
CN-111696851-B Film forming method and heat treatment apparatus 东京毅力科创株式会社 2024-07-09 CN disclosed
US-11239076-B2 Film forming method and heat treatment apparatus TOKYO ELECTRON LIMITED (JP) 2022-02-01 US disclosed
US-11177133-B2 Method of filling recess TOKYO ELECTRON LIMITED (JP) 2021-11-16 US disclosed
US-11114297-B2 Method for forming semiconductor film and film forming device TOKYO ELECTRON LIMITED (JP) 2021-09-07 US disclosed
US-11062904-B2 Method of forming polysilicon film and film forming apparatus TOKYO ELECTRON LIMITED (JP) 2021-07-13 US disclosed
US-10957535-B2 Semiconductor film forming method and film forming apparatus TOKYO ELECTRON LIMITED (JP) 2021-03-23 US disclosed
US-10822714-B2 Method of growing crystal in recess and processing apparatus used therefor TOKYO ELECTRON LIMITED (JP) 2020-11-03 US disclosed
US-20070154637-A1 Organometallic composition ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2007-07-05 US disclosed
EP-1798307-A1 Organometallic composition Rohm and Haas Electronic Materials LLC (US) 2007-06-20 EP disclosed
US-20070077733-A1 Germanium compound delivery device ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2007-04-05 US disclosed
US-7141488-B2 Method of depositing germanium-containing films ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2006-11-28 US disclosed
CN-1654707-A Organometallic compounds ROHM & HAAS ELECT MAT (US) 2005-08-17 CN disclosed
CN-1584108-A Organometallic compounds ROHM & HAAS ELECT MAT (US) 2005-02-23 CN disclosed
US-20040194703-A1 Organometallic compounds ROHM AND HAAS ELECTRONIC MATERIALS, L.L.C. 2004-10-07 US disclosed
US-20040197945-A1 Germanium compounds ROHM AND HAAS ELECTRONIC MATERIALS L.L.C. 2004-10-07 US disclosed
EP-1464725-A2 Germanium compounds suitable for use in vapor deposition processes Rohm and Haas Electronic Materials, L.L.C. (US) 2004-10-06 EP disclosed
EP-1464724-A2 Organometallic compounds suitable for use in vapor deposition processes Rohm and Haas Electronic Materials, L.L.C. (US) 2004-10-06 EP disclosed