Known targets — ChEMBL curated mechanism
ACHEBDKRB2CHRM1CHRM2CHRM3CHRNA1CHRNB1CHRNDCHRNECHRNGGUCY1A1GUCY1A2GUCY1B1GUCY1B2NAMPTPTAFRSLC10A2SLC6A2SLC6A3TACR1dacAdacBdacCftsImrcAmrcBmrdA
The experimentally established mechanism targets of Hydrochloric Acid. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1001653 | 0.67 | — | — | |
| SCHEMBL9148808 | 0.67 | — | — | |
| SCHEMBL23451809 | 0.63 | — | — | |
| Hydrochloric Acid SCHEMBL2960401 | 0.63 | — | — | |
| Trimethylammonium SCHEMBL10947847 | 0.62 | — | — | |
| Trimethylammonium SCHEMBL3964434 | 0.62 | — | — | |
| Trimethylammonium SCHEMBL11327321 | 0.62 | — | — | |
| Trimethylammonium SCHEMBL11207315 | 0.62 | — | — | |
| Trimethylammonium SCHEMBL588289 | 0.62 | — | — | |
| Trimethylammonium SCHEMBL28117277 | 0.62 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 119 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-114975085-B | Radio frequency silicon on insulator structure with superior performance, stability and manufacturability | 环球晶圆股份有限公司 | 2026-05-22 | — | — | CN | disclosed |
| US-12557611-B2 | Semiconductor on insulator structure comprising a buried high resistivity layer | GLOBALWAFERS CO., LTD. (TW) | 2026-02-17 | — | — | US | disclosed |
| EP-4659286-A1 | METHODS OF MANUFACTURING SEMICONDUCTOR-ON-INSULATOR WAFERS HAVING CHARGE TRAPPING LAYERS WITH CONTROLLED STRESS | Globalwafers Co., Ltd. (TW) | 2025-12-10 | — | — | EP | disclosed |
| US-20250351408-A1 | LEAKAGE REDUCTION FOR MULTI-GATE DEVICES | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-11-13 | — | — | US | disclosed |
| EP-4235748-B1 | RADIO FREQUENCY SILICON ON INSULATOR STRUCTURE WITH SUPERIOR PERFORMANCE, STABILITY, AND MANUFACTURABILITY | GLOBALWAFERS CO LTD (TW) | 2025-10-08 | — | — | EP | disclosed |
| US-12403437-B2 | Method for producing nanodiamonds doped with group 14 element, and method for purifying same | DAICEL CORPORATION (JP) | 2025-09-02 | — | — | US | disclosed |
| US-12396192-B2 | Leakage reduction for multi-gate devices | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-08-19 | — | — | US | disclosed |
| US-12351463-B2 | Heteroatom-doped nanodiamond | DAICEL CORPORATION (JP) | 2025-07-08 | — | — | US | disclosed |
| US-20250212498-A1 | INNER SPACER STRUCTURE AND METHODS OF FORMING SUCH | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-06-26 | — | — | US | disclosed |
| CN-113631252-B | Method for producing and purifying nanodiamond doped with carbon group element | 株式会社大赛璐 | 2025-05-23 | — | — | CN | disclosed |
| US-20150162241-A1 | METAL PVD-FREE CONDUCTING STRUCTURES | INVENSAS LLC | 2015-06-11 | — | — | US | disclosed |
| US-20150115480-A1 | METHOD OF MANUFACTURING HIGH RESISTIVITY SOI WAFERS WITH CHARGE TRAPPING LAYERS BASED ON TERMINATED SI DEPOSITION | GLOBALWAFERS CO., LTD. (TW) | 2015-04-30 | — | — | US | disclosed |
| US-8981564-B2 | Metal PVD-free conducting structures | INVENSAS CORPORATION (US) | 2015-03-17 | — | — | US | disclosed |
| US-20140339702-A1 | METAL PVD-FREE CONDUCTING STRUCTURES | INVENSAS CORPORATION (US) | 2014-11-20 | — | — | US | disclosed |
| EP-1464725-B1 | Germanium compounds suitable for use in vapor deposition processes | ROHM & HAAS ELECT MAT (US) | 2008-12-17 | — | — | EP | disclosed |
| US-20070077733-A1 | Germanium compound delivery device | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2007-04-05 | — | — | US | disclosed |
| US-7141488-B2 | Method of depositing germanium-containing films | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2006-11-28 | — | — | US | disclosed |
| CN-1654707-A | Organometallic compounds | ROHM & HAAS ELECT MAT (US) | 2005-08-17 | — | — | CN | disclosed |
| US-20040197945-A1 | Germanium compounds | ROHM AND HAAS ELECTRONIC MATERIALS L.L.C. | 2004-10-07 | — | — | US | disclosed |
| EP-1464725-A2 | Germanium compounds suitable for use in vapor deposition processes | Rohm and Haas Electronic Materials, L.L.C. (US) | 2004-10-06 | — | — | EP | disclosed |