SCHEMBL10020253

SCHEMBL10020253

O=C(OCC(O)COc1ccccc1)c1ccccc1O

nearest known ligand 0.58

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ADRB2 P07550 2/20 0.58
ADRB1 P08588 2/20 0.58
ADRB3 P13945 2/20 0.58
MEN1 O00255 2/20 0.55
KMT2A Q03164 2/20 0.55
HPGD P15428 2/20 0.53
HSD17B10 Q99714 2/20 0.53
ALOX15 P16050 1/20 0.53
TDP1 Q9NUW8 2/20 0.53
LMNA P02545 4/20 0.49
MAPT P10636 2/20 0.45
ALDH1A1 P00352 2/20 0.45
TSHR P16473 2/20 0.45
NPC1 O15118 2/20 0.44
RAB9A P51151 2/20 0.44
CYP1A2 P05177 1/20 0.44
KDM4E B2RXH2 1/20 0.44
NFKB1 P19838 1/20 0.44
NFKB2 Q00653 1/20 0.44
RELA Q04206 1/20 0.44

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28993940 0.91 MEN1 (0.60) ADRB2ADRB1ADRB3MEN1KMT2A
SCHEMBL12083435 0.89 ADRB2 (0.68) ADRB2ADRB1ADRB3KMT2AHPGD
SCHEMBL31344470 0.87 MEN1 (0.56) ADRB2ADRB1ADRB3MEN1KMT2A
SCHEMBL12134405 0.83 MEN1 (0.56) MEN1KMT2AMAPTALDH1A1TSHR
SCHEMBL13286767 0.82 ADRB2 (0.62) ADRB2ADRB1ADRB3MEN1KMT2A
SCHEMBL446204 0.81 ADRB2 (0.63) ADRB2ADRB1ADRB3KMT2AHPGD
SCHEMBL17629572 0.81 ADRB2 (0.63) ADRB2ADRB1ADRB3KMT2AHPGD
SCHEMBL7037877 0.81 MEN1 (0.72) ADRB2ADRB1ADRB3MEN1KMT2A
SCHEMBL12865769 0.81 MEN1 (0.77) ADRB2ADRB1ADRB3MEN1KMT2A
SCHEMBL17629569 0.81 ADRB2 (0.63) ADRB2ADRB1ADRB3KMT2AHPGD

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9005873-B2 Composition for forming resist underlayer film for EUV lithography NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2015-04-14 US disclosed
US-20120040291-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR EUV LITHOGRAPHY NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2012-02-16 US disclosed
US-20120040291-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR EUV LITHOGRAPHY NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2012-02-16 US disclosed
US-20100081081-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION FOR ELECTRON BEAM LITHOGRAPHY NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2010-04-01 US disclosed
US-20100081081-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION FOR ELECTRON BEAM LITHOGRAPHY NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2010-04-01 US disclosed