Predicted protein targets (top 5)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | DPP8 | Q6V1X1 | 3/20 | 0.34 |
| ▸ | DPP9 | Q86TI2 | 3/20 | 0.34 |
| ▸ | DPP4 | P27487 | 2/20 | 0.32 |
| ▸ | CYP17A1 | P05093 | 1/20 | 0.32 |
| ▸ | CYP19A1 | P11511 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL10040426 | 0.92 | — | — | |
| SCHEMBL10040431 | 0.91 | DPP8 (0.33) | DPP8DPP9DPP4CYP17A1CYP19A1 | |
| SCHEMBL13563631 | 0.91 | DPP8 (0.33) | DPP8DPP9DPP4CYP17A1CYP19A1 | |
| SCHEMBL10259411 | 0.90 | DPP8 (0.37) | DPP8DPP9DPP4CYP17A1CYP19A1 | |
| SCHEMBL18400964 | 0.88 | DPP8 (0.33) | DPP8DPP9CYP17A1CYP19A1 | |
| SCHEMBL15396578 | 0.88 | EPHX2 (0.34) | DPP8DPP9DPP4CYP17A1CYP19A1 | |
| SCHEMBL10040425 | 0.87 | CYP19A1 (0.36) | DPP8DPP9DPP4CYP17A1CYP19A1 | |
| SCHEMBL14226148 | 0.87 | — | — | |
| SCHEMBL10040429 | 0.87 | — | — | |
| SCHEMBL10040436 | 0.87 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 30 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9551932-B2 | Patterning process and resist composition | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-01-24 | — | — | US | disclosed |
| US-9519213-B2 | Patterning process and resist composition | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-12-13 | — | — | US | disclosed |
| US-20160070174-A1 | PATTERN FORMING METHOD, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2016-03-10 | — | — | US | disclosed |
| US-9256127-B2 | Monomer, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-02-09 | — | — | US | disclosed |
| US-20150323865-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-11-12 | — | — | US | disclosed |
| US-20150323865-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-11-12 | — | — | US | disclosed |
| US-9057949-B2 | Patterning process, resist composition, polymer, and polymerizable ester compound | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-06-16 | — | — | US | disclosed |
| US-9029064-B2 | Patterning process and resist composition | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-05-12 | — | — | US | disclosed |
| US-8999630-B2 | Patterning process and resist composition | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-04-07 | — | — | US | disclosed |
| US-8932803-B2 | Pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-01-13 | — | — | US | disclosed |
| US-20130065183-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-03-14 | — | — | US | disclosed |
| US-20130052587-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-02-28 | — | — | US | disclosed |
| US-20130017492-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-01-17 | — | — | US | disclosed |
| US-20120315581-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-12-13 | — | — | US | disclosed |
| US-20120308930-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-12-06 | — | — | US | disclosed |
| US-20120288796-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-11-15 | — | — | US | disclosed |
| US-20120276485-A1 | PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-11-01 | — | — | US | disclosed |
| US-20120183903-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-07-19 | — | — | US | disclosed |
| US-20120009527-A1 | PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-01-12 | — | — | US | disclosed |
| US-20110236826-A1 | PATTERNING PROCESS, RESIST COMPOSITION, AND ACETAL COMPOUND | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-09-29 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20110236826-A1 | PATTERNING PROCESS, RESIST COMPOSITION, AND ACETAL COMPOUND | PARG, RAD51, CD38 | DPP8 4872/4885DPP9 4799/4885DPP4 4847/4885 |
| US-20150323865-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | H1-0, H1-3, H1-2 | DPP8 4882/4885DPP9 4843/4885DPP4 4824/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.