SCHEMBL10087740

SCHEMBL10087740

Cc1c(F)c(F)c(OC(=O)C2CCCCC2)c(F)c1F

nearest known ligand 0.46

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ TAS1R3 Q7RTX0 4/20 0.46
▸ TAS1R1 Q7RTX1 3/20 0.46
▸ TAS1R2 Q8TE23 3/20 0.46
▸ KMT2A Q03164 4/20 0.43
▸ SMN1; SMN2 Q16637 2/20 0.43
▸ HTT P42858 1/20 0.43
▸ TDP1 Q9NUW8 1/20 0.43
▸ POLB P06746 2/20 0.41
▸ ELANE P08246 1/20 0.40
▸ TSHR P16473 1/20 0.40
▸ MAPK1 P28482 1/20 0.40
▸ CHRM2 P08172 1/20 0.39
▸ CHRM4 P08173 1/20 0.39
▸ CHRM1 P11229 1/20 0.39
▸ CHRM3 P20309 1/20 0.39
▸ ESR1 P03372 1/20 0.39
▸ ESR2 Q92731 1/20 0.39
▸ MEN1 O00255 1/20 0.38
▸ MAPT P10636 1/20 0.38
▸ ALDH1A1 P00352 2/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL27302811 0.91 TSHR (0.47) KMT2ASMN1; SMN2HTTTDP1POLB
SCHEMBL20767013 0.85 KMT2A (0.53) KMT2ASMN1; SMN2HTTTDP1POLB
SCHEMBL17968590 0.81 POLB (0.42) KMT2ASMN1; SMN2HTTTDP1POLB
SCHEMBL20766727 0.81 KMT2A (0.42) KMT2ASMN1; SMN2HTTTDP1ELANE
SCHEMBL10087874 0.80 KMT2A (0.39) KMT2ASMN1; SMN2HTTTDP1POLB
SCHEMBL12203398 0.77 KMT2A (0.36) KMT2ASMN1; SMN2HTTTDP1POLB
SCHEMBL11933083 0.75 KMT2A (0.51) KMT2ASMN1; SMN2HTTTDP1POLB
SCHEMBL25128746 0.74 KMT2A (0.37) KMT2ASMN1; SMN2HTTTDP1ELANE
SCHEMBL11035678 0.74 POLB (0.54) KMT2ASMN1; SMN2HTTTDP1POLB
SCHEMBL31239213 0.73 GABRP (0.42) KMT2ASMN1; SMN2HTTTDP1POLB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8343708-B2 Positive resist composition and pattern forming method FUJIFILM CORPORATION (JP) 2013-01-01 — — US disclosed
US-20120034564-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2012-02-09 — — US disclosed
Send feedback