SCHEMBL10087742

SCHEMBL10087742

O=S(=O)(NS(=O)(=O)C(F)(F)C(F)(F)C(F)(F)S(=O)(=O)N1CCCCC1)C(F)(F)F

nearest known ligand 0.33

Predicted protein targets (top 7)

geneUniProtsupporting neighboursconfidence
CA1 P00915 2/20 0.33
CA2 P00918 2/20 0.33
POLB P06746 1/20 0.33
KMT2A Q03164 2/20 0.33
FKBP1A P62942 2/20 0.33
GLA P06280 1/20 0.33
TSHR P16473 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14682255 0.95 CA1 (0.37) CA1CA2POLBKMT2AFKBP1A
SCHEMBL13464444 0.89 CA1 (0.35) CA1CA2POLBKMT2AFKBP1A
SCHEMBL178329 0.87 KDM4E (0.38) KMT2A
SCHEMBL8736879 0.85 KDM4E (0.36) KMT2A
SCHEMBL2754970 0.85 KDM4E (0.37)
SCHEMBL106612 0.85
SCHEMBL12386322 0.85 CA1 (0.32) CA1CA2POLBKMT2ATSHR
SCHEMBL12465140 0.83 MEN1 (0.36) POLBKMT2A
SCHEMBL11923714 0.82 CA1 (0.35) CA1CA2POLBKMT2AFKBP1A
SCHEMBL14924179 0.82 CA1 (0.30) CA1CA2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 65 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230213861-A1 METHOD FOR PRODUCING ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2023-07-06 US disclosed
US-20230148344-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, COMPOUND, AND METHOD FOR PRODUCING COMPOUND FUJIFILM CORPORATION (JP) 2023-05-11 US disclosed
US-20230148344-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, COMPOUND, AND METHOD FOR PRODUCING COMPOUND FUJIFILM CORPORATION (JP) 2023-05-11 US disclosed
US-11181820-B2 Actinic ray-sensitive or radiation-sensitive resin composition, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2021-11-23 US disclosed
US-11009791-B2 Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2021-05-18 US disclosed
US-10761426-B2 Pattern forming method, method for manufacturing electronic device, and laminate FUJIFILM CORPORATION (JP) 2020-09-01 US disclosed
US-20190329292-A1 SURFACE TREATMENT LIQUID AND SURFACE TREATMENT METHOD TOKYO OHKA KOGYO CO., LTD. (JP) 2019-10-31 US disclosed
US-10400078-B2 Surface treatment liquid TOKYO OHKA KOGYO CO., LTD. (JP) 2019-09-03 US disclosed
US-20190137875-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2019-05-09 US disclosed
US-20180217497-A1 PATTERN FORMING METHOD AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION FUJIFILM CORPORATION (JP) 2018-08-02 US disclosed
US-20100112477-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2010-05-06 US disclosed
US-20100112477-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2010-05-06 US disclosed
US-7666574-B2 Positive resist composition and pattern forming method FUJIFILM CORPORATION (JP) 2010-02-23 US disclosed
US-7666574-B2 Positive resist composition and pattern forming method FUJIFILM CORPORATION (JP) 2010-02-23 US disclosed
US-7635554-B2 Positive resist composition and pattern forming method FUJIFILM CORPORATION (JP) 2009-12-22 US disclosed
US-7635554-B2 Positive resist composition and pattern forming method FUJIFILM CORPORATION (JP) 2009-12-22 US disclosed
US-20080248421-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2008-10-09 US disclosed
US-20080248421-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2008-10-09 US disclosed
US-20080241746-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2008-10-02 US disclosed
US-20080241746-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2008-10-02 US disclosed