⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL28253218 | 1.00 | — | — | |
| SCHEMBL28208731 | 1.00 | — | — | |
| Water SCHEMBL28197309 | 0.82 | — | — | |
| SCHEMBL28201380 | 0.82 | — | — | |
| SCHEMBL6270158 | 0.82 | — | — | |
| Nitrogen SCHEMBL3261354 | 0.82 | — | — | |
| SCHEMBL9560882 | 0.71 | — | — | |
| SCHEMBL278016 | 0.71 | — | — | |
| SCHEMBL8322634 | 0.71 | — | — | |
| SCHEMBL8433806 | 0.71 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 832 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12640187-B1 | Apparatus to reduce polarization targets or improve memory density for non-linear polar material based memory | Kepler Computing Inc. (US) | 2026-05-26 | — | — | US | claimed |
| US-12640199-B1 | Amplitude modulation for writing to a multi-level bit-cell | Kepler Computing Inc. (US) | 2026-05-26 | — | — | US | claimed |
| US-12635145-B1 | Fabricating non-linear polar material based capacitors for memory and logic | Kepler Computing Inc. (US) | 2026-05-19 | — | — | US | claimed |
| US-12593456-B1 | Method of fabricating transistors and stacked non-planar capacitors for memory and logic applications | Kepler Computing Inc. (US) | 2026-03-31 | — | — | US | claimed |
| US-12562204-B2 | Non-linear polar material based multi-capacitor bit-cell with shared gain element with series transistor and individual access transistor | Kepler Computing Inc. (US) | 2026-02-24 | — | — | US | claimed |
| US-12563737-B1 | Memory device fabrication through wafer bonding | Kepler Computing Inc. (US) | 2026-02-24 | — | — | US | claimed |
| US-12524204-B1 | Ferroelectric or paraelectric based low power multiplier | Kepler Computing Inc. (US) | 2026-01-13 | — | — | US | claimed |
| US-12525543-B1 | Integration process for fabricating embedded memory | Kepler Computing Inc. (US) | 2026-01-13 | — | — | US | claimed |
| US-12517701-B1 | Sequential reset mechanism for a chain of majority or minority gates having non-linear polar material | Kepler Computing Inc. (US) | 2026-01-06 | — | — | US | claimed |
| US-12464730-B2 | Method of forming capacitors through wafer bonding | Kepler Computing Inc. (US) | 2025-11-04 | — | — | US | claimed |
| EP-1791195-A1 | Antiferroelectric polymer composites, methods of manufacture thereof, and articles comprising the same | General Electric Company (US) | 2007-05-30 | — | — | EP | claimed |
| US-20070117913-A1 | Antiferroelectric polymer composites, methods of manufacture thereof, and articles comprising the same | GENERAL ELECTRIC COMPANY | 2007-05-24 | — | — | US | claimed |
| US-7193279-B2 | Non-planar MOS structure with a strained channel region | INTEL CORPORATION (US) | 2007-03-20 | — | — | US | claimed |
| CN-1837143-A | Process for preparing submicro-crystal piezoelectric ceramics | UNIV TSINGHUA (CN) | 2006-09-27 | — | — | CN | claimed |
| WO-2006078469-A1 | NON-PLANAR MOS STRUCTURE WITH A STRAINED CHANNEL REGION | INTEL CORPORATION (US) | 2006-07-27 | — | — | WO | claimed |
| US-20060157794-A1 | Non-planar MOS structure with a strained channel region | DOYLE BRIAN S | 2006-07-20 | — | — | US | claimed |
| US-20060157687-A1 | Non-planar MOS structure with a strained channel region | INTEL CORPORATION | 2006-07-20 | — | — | US | claimed |
| CN-2181675-Y | Integrated thermoelectric film infrared detector | UNIV SICHUAN (CN) | 1994-11-02 | — | — | CN | claimed |
| EP-0396703-A1 | A METHOD FOR THE PRODUCTION OF THIN FILM PEROVSKITE PHASE LEAD SCANDIUM TANTALATE | PLESSEY OVERSEAS LIMITED (GB) | 1990-11-14 | — | — | EP | claimed |
| WO-1990005202-A1 | A METHOD FOR THE PRODUCTION OF THIN FILM PEROVSKITE PHASE LEAD SCANDIUM TANTALATE | PLESSEY OVERSEAS LIMITED (GB) | 1990-05-17 | — | — | WO | claimed |