⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Water SCHEMBL22391519 | 0.87 | — | — | |
| SCHEMBL8845249 | 0.82 | — | — | |
| SCHEMBL3904999 | 0.82 | — | — | |
| SCHEMBL28253218 | 0.82 | — | — | |
| SCHEMBL295701 | 0.82 | — | — | |
| SCHEMBL1010184 | 0.82 | — | — | |
| SCHEMBL28208731 | 0.82 | — | — | |
| SCHEMBL8330981 | 0.67 | — | — | |
| Water SCHEMBL7915305 | 0.67 | — | — | |
| SCHEMBL7160836 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 77 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-116425539-B | Controllable preparation method of high-energy-storage and high-electricity tantalum scandium acid lead ceramic under low electric field | 湘潭大学 | 2024-08-23 | — | — | CN | claimed |
| CN-116425539-A | Controllable preparation method of high-energy-storage and high-electricity tantalum scandium acid lead ceramic under low electric field | 湘潭大学 | 2023-07-14 | — | — | CN | claimed |
| CN-114651306-A | Ferroelectric device having multiple polarization states and method of making same | 桑迪士克科技有限责任公司 | 2022-06-21 | — | — | CN | claimed |
| CN-106505983-A | Touch sensible switch and electronic installation | 麦克思商务咨询(深圳)有限公司 | 2017-03-15 | — | — | CN | claimed |
| CN-106463421-A | Through-body via liner deposition | 英特尔公司 | 2017-02-22 | — | — | CN | claimed |
| CN-122054565-A | Semiconductor device and method for manufacturing the same | 长鑫科技集团股份有限公司 | 2026-05-15 | — | — | CN | disclosed |
| US-20250331237-A1 | SEMICONDUCTOR DEVICE INCLUDING A MULTI-BRIDGE CHANNEL FIELD-EFFECT TRANSISTOR | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2025-10-23 | — | — | US | disclosed |
| CN-116425539-B | Controllable preparation method of high-energy-storage and high-electricity tantalum scandium acid lead ceramic under low electric field | 湘潭大学 | 2024-08-23 | — | — | CN | disclosed |
| CN-116425539-B | Controllable preparation method of high-energy-storage and high-electricity tantalum scandium acid lead ceramic under low electric field | 湘潭大学 | 2024-08-23 | — | — | CN | disclosed |
| CN-118507254-A | High-energy-storage-density lead scandium tantalate and strontium titanate laminated composite film and preparation method thereof | 湘潭大学 | 2024-08-16 | — | — | CN | disclosed |
| EP-4322045-A1 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | Samsung Electronics Co., Ltd. (KR) | 2024-02-14 | — | — | EP | disclosed |
| CN-109686790-B | Semiconductor device with a semiconductor device having a plurality of semiconductor chips | 三星电子株式会社 | 2023-11-07 | — | — | CN | disclosed |
| CN-106170868-A | Aspect ratio trapping (ART) for fabricating vertical semiconductor devices | 英特尔公司 | 2016-11-30 | — | — | CN | disclosed |
| CN-106030810-A | Improved cladding layer epitaxy via template engineering for hetero-integration on silicon | 英特尔公司 | 2016-10-12 | — | — | CN | disclosed |
| CN-106024785-A | Integrated circuit device and method of manufacturing the same | 三星电子株式会社 | 2016-10-12 | — | — | CN | disclosed |
| CN-103871856-B | The forming method of metal gates | 中芯国际集成电路制造(上海)有限公司 | 2016-08-31 | — | — | CN | disclosed |
| CN-105874572-A | Non-planar semiconductor device having hybrid geometry based active region | 英特尔公司 | 2016-08-17 | — | — | CN | disclosed |
| US-20160172418-A1 | METHOD OF MANUFACTURING CMOS IMAGE SENSOR | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2016-06-16 | — | — | US | disclosed |
| WO-2005112110-A1 | A METHOD FOR MAKING A SEMICONDUCTOR DEVICE HAVING A HIGH-K GATE DIELECTRIC LAYER AND A METAL GATE ELECTRODE | INTEL CORPORATION (US) | 2005-11-24 | — | — | WO | disclosed |
| JP-2000323350-A | DIELECTRICS THIN-FILM CAPACITOR | FUJI ELECTRIC CO LTD | 2000-11-24 | — | — | JP | disclosed |