⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL12939459 | 0.90 | HSP90AA1 (0.33) | — | |
| SCHEMBL13992868 | 0.86 | KDM4E (0.32) | — | |
| SCHEMBL111454 | 0.85 | MAPT (0.32) | — | |
| SCHEMBL12429920 | 0.82 | PPM1B (0.33) | — | |
| SCHEMBL13992871 | 0.82 | — | — | |
| SCHEMBL12429931 | 0.81 | — | — | |
| SCHEMBL12429904 | 0.80 | — | — | |
| SCHEMBL12429927 | 0.80 | — | — | |
| SCHEMBL13992847 | 0.79 | ALDH1A1 (0.32) | — | |
| SCHEMBL13992846 | 0.79 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 31 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20170184970-A1 | PATTERN FORMING METHOD, COMPOSITION FOR FORMING UPPER LAYER FILM, RESIST PATTERN, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-06-29 | — | — | US | disclosed |
| US-9465292-B2 | Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same | FUJIFILM CORPORATION (JP) | 2016-10-11 | — | — | US | disclosed |
| US-20160187780-A1 | POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME | FUJIFILM CORPORATION (JP) | 2016-06-30 | — | — | US | disclosed |
| US-9023576-B2 | Positive resist composition for immersion exposure and pattern-forming method using the same | FUJIFILM CORPORATION (JP) | 2015-05-05 | — | — | US | disclosed |
| US-8637229-B2 | Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method | FUJIFILM CORPORATION (JP) | 2014-01-28 | — | — | US | disclosed |
| US-8530148-B2 | Stable formation of high precision fine patterns utilizing positive resist whose solubility increases in positive developer and decreases in negative developer upon irradiation | FUJIFILM CORPORATION (JP) | 2013-09-10 | — | — | US | disclosed |
| US-8507194-B2 | — | — | 2013-08-13 | — | — | US | disclosed |
| US-8507193-B2 | — | — | 2013-08-13 | — | — | US | disclosed |
| US-8389200-B2 | Pattern forming method | FUJIFILM CORPORATION (JP) | 2013-03-05 | — | — | US | disclosed |
| US-20120315449-A1 | PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2012-12-13 | — | — | US | disclosed |
| US-7459261-B2 | Resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-12-02 | — | — | US | disclosed |
| US-20080292989-A1 | POSITIVE WORKING PHOTOSENSITIVE COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-11-27 | — | — | US | disclosed |
| US-7442490-B2 | Positive resist composition and pattern formation method using the positive resist composition | FUJIFILM CORPORATION (JP) | 2008-10-28 | — | — | US | disclosed |
| US-20080261150-A1 | PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2008-10-23 | — | — | US | disclosed |
| US-20080241737-A1 | RESIST COMPOSITION AND PATTERN-FORMING METHOD USING SAME | FUJIFILM CORPORATION (JP) | 2008-10-02 | — | — | US | disclosed |
| US-7425404-B2 | Chemical amplification resist composition and pattern-forming method using the same | FUJIFILM CORPORATION (JP) | 2008-09-16 | — | — | US | disclosed |
| US-20080138742-A1 | PHOTOSENSITIVE COMPOSITION, COMPOUND FOR USE IN THE PHOTOSENSITIVE COMPOSITION AND PATTERN FORMING METHOD USING THE PHOTOSENSITIVE COMPOSITION | FUJIFILM CORPORATION (JP) | 2008-06-12 | — | — | US | disclosed |
| US-7341817-B2 | Photosensitive composition, compound for use in the photosensitive composition, and pattern forming method using the photosensitive composition | FUJIFILM CORPORATION (JP) | 2008-03-11 | — | — | US | disclosed |
| US-20070134590-A1 | Resin showing an increase in solubility in alkali developer by action of an acid, a compound being capable of generating an acid when irradiated with an actinic ray or radiation, an acrylic resin with silicon-containing units and being stable to acids but insoluble in alkali developer, solvent | FUJIFILM CORPORATION. (JP) | 2007-06-14 | — | — | US | disclosed |
| US-20070059639-A1 | Positive resist composition and pattern-forming method using the same | FUJI PHOTO FILM CO., LTD. | 2007-03-15 | — | — | US | disclosed |