SCHEMBL10134937

SCHEMBL10134937

C=Cc1ccc2cc(C(=O)OCC(F)(F)S(=O)(=O)O)ccc2c1

nearest known ligand 0.36

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TDP1 Q9NUW8 3/20 0.36
MAPT P10636 3/20 0.36
SMN1; SMN2 Q16637 2/20 0.36
GAA P10253 2/20 0.36
NPC1 O15118 1/20 0.36
XBP1 P17861 1/20 0.36
RAB9A P51151 1/20 0.36
ADRB2 P07550 1/20 0.36
ADRB1 P08588 1/20 0.36
ADRB3 P13945 1/20 0.36
KDM4E B2RXH2 2/20 0.34
MCL1 Q07820 1/20 0.33
SNCA P37840 1/20 0.32
MAPK1 P28482 2/20 0.32
MEN1 O00255 2/20 0.32
KMT2A Q03164 2/20 0.32
ALDH1A1 P00352 1/20 0.32
EGFR P00533 1/20 0.32
TP53 P04637 1/20 0.32
CYP3A4 P08684 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10134911 0.87 TDP1 (0.40) TDP1ADRB2ADRB1ADRB3SNCA
SCHEMBL10134920 0.85 MAPK1 (0.38) TDP1MAPTSMN1; SMN2GAANPC1
SCHEMBL10134923 0.84 MAPT (0.40) TDP1MAPTSMN1; SMN2GAANPC1
SCHEMBL12016470 0.83 NPC1 (0.50) TDP1MAPTSMN1; SMN2GAANPC1
SCHEMBL23595630 0.82 NPC1 (0.41) TDP1MAPTSMN1; SMN2GAANPC1
SCHEMBL23595629 0.82 MAPT (0.46) TDP1MAPTSMN1; SMN2GAANPC1
SCHEMBL2742177 0.81 HRH3 (0.34) RAB9AADRB2ADRB1ADRB3KDM4E
SCHEMBL14902654 0.81 MCL1 (0.39) SMN1; SMN2MCL1MEN1KMT2AHTR2C
Pyridine SCHEMBL17438749 0.79 SNCA (0.43) TDP1ADRB2ADRB1ADRB3KDM4E
SCHEMBL12376761 0.79 HRH3 (0.38) TDP1MAPTSMN1; SMN2ADRB2ADRB1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8980527-B2 Pattern forming process and resist compostion SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-03-17 US disclosed
US-8980527-B2 Pattern forming process and resist compostion SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-03-17 US disclosed
US-8815492-B2 Chemically amplified positive resist composition for ArF immersion lithography and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-08-26 US disclosed
US-8815492-B2 Chemically amplified positive resist composition for ArF immersion lithography and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-08-26 US disclosed
US-8691490-B2 Sulfonium salt, polymer, method for producing the polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-04-08 US disclosed
US-8691490-B2 Sulfonium salt, polymer, method for producing the polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-04-08 US disclosed
US-20130183621-A1 PATTERN FORMING PROCESS AND RESIST COMPOSTION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-07-18 US disclosed
US-20130183621-A1 PATTERN FORMING PROCESS AND RESIST COMPOSTION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-07-18 US disclosed
US-20130108964-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION FOR ArF IMMERSION LITHOGRAPHY AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-05-02 US disclosed
US-20130108964-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION FOR ArF IMMERSION LITHOGRAPHY AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-05-02 US disclosed
US-8105748-B2 Polymerizable anion-containing sulfonium salt and polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-01-31 US disclosed
US-8105748-B2 Polymerizable anion-containing sulfonium salt and polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-01-31 US disclosed
US-20110189607-A1 NOVEL SULFONIUM SALT, POLYMER, METHOD FOR PRODUCING THE POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-08-04 US disclosed
US-20110189607-A1 NOVEL SULFONIUM SALT, POLYMER, METHOD FOR PRODUCING THE POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-08-04 US disclosed
US-20100099042-A1 POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-04-22 US disclosed
US-20100099042-A1 POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-04-22 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20100099042-A1 POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS ARSA, ACSL3, ASH2L TDP1 4560/4885MAPT 4661/4885SMN1; SMN2 2410/4885
US-20110189607-A1 NOVEL SULFONIUM SALT, POLYMER, METHOD FOR PRODUCING THE POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS RPS4Y1, ETV6, RPS4X TDP1 3710/4885MAPT 3052/4885SMN1; SMN2 2631/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.