SCHEMBL10138485

SCHEMBL10138485

CCC(C)c1cc(C(C)C)c(O)c(C(C)C)c1

nearest known ligand 0.54

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA1 P00915 2/20 0.54
CA2 P00918 2/20 0.54
GABRA1 P14867 6/20 0.52
GABRB2 P47870 3/20 0.52
GABRB1 P18505 5/20 0.50
GSR P00390 1/20 0.47
HPGD P15428 2/20 0.44
GAA P10253 2/20 0.44
USP2 O75604 1/20 0.44
ALDH1A1 P00352 1/20 0.44
PKM P14618 1/20 0.44
ALOX15 P16050 1/20 0.44
HSD17B10 Q99714 1/20 0.44
TSHR P16473 2/20 0.43
FAAH O00519 1/20 0.43
LMNA P02545 1/20 0.43
CYP1A2 P05177 1/20 0.43
CYP3A4 P08684 1/20 0.43
GABRG2 P18507 1/20 0.43
PTGS1 P23219 1/20 0.43

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1836944 0.89 TSHR (0.48) CA1CA2GABRA1GABRB2GABRB1
SCHEMBL28658146 0.88 GABRA1 (0.46) CA1CA2GABRA1GABRB2GABRB1
SCHEMBL6744605 0.83 TSHR (0.44) CA1CA2GABRA1GABRB2GABRB1
SCHEMBL15844791 0.83 CA1 (0.54) CA1CA2GABRA1GABRB2GABRB1
SCHEMBL13779538 0.81 CA1 (0.71) CA1CA2GABRA1GABRB2GABRB1
SCHEMBL4549116 0.79 CA1 (0.50) CA1CA2GABRA1GABRB2GABRB1
SCHEMBL15065156 0.79 TSHR (0.44) CA1CA2GABRA1GABRB2HPGD
SCHEMBL94533 0.79 GABRA1 (0.77) CA1CA2GABRA1GABRB2GABRB1
SCHEMBL15756301 0.78 USP2 (0.44) GABRA1GABRB2HPGDGAAUSP2
SCHEMBL6937756 0.78 TSHR (0.42) CA1CA2GABRA1GABRB2HPGD

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8092978-B2 Positive resist composition for electron beam, X-ray or EUV and pattern forming method using the same FUJIFILM CORPORATION (JP) 2012-01-10 US disclosed
US-8084183-B2 Resist composition for electron beam, X-ray, or EUV, and pattern-forming method using the same FUJIFILM CORPORATION (JP) 2011-12-27 US disclosed
US-20090246685-A1 POSITIVE RESIST COMPOSITION FOR ELECTRON BEAM, X-RAY OR EUV AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2009-10-01 US disclosed
US-20090047598-A1 RESIST COMPOSITION FOR ELECTRON BEAM, X-RAY, OR EUV, AND PATTERN-FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2009-02-19 US disclosed