Predicted protein targets (top 3)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CA1 | P00915 | 1/20 | 0.39 |
| ▸ | CA2 | P00918 | 1/20 | 0.39 |
| ▸ | EPHX1 | P07099 | 1/20 | 0.36 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL18535557 | 0.87 | CA2 (0.43) | CA1CA2EPHX1 | |
| SCHEMBL25899608 | 0.77 | EPHX1 (0.38) | CA1CA2EPHX1 | |
| SCHEMBL7133717 | 0.75 | EPHX1 (0.43) | CA1CA2EPHX1 | |
| SCHEMBL2779676 | 0.75 | CA1 (0.42) | CA1CA2EPHX1 | |
| SCHEMBL6466187 | 0.73 | CA1 (0.40) | CA1CA2EPHX1 | |
| SCHEMBL4457449 | 0.73 | CA2 (0.56) | CA1CA2EPHX1 | |
| SCHEMBL37874 | 0.73 | CA2 (0.56) | CA1CA2EPHX1 | |
| SCHEMBL278189 | 0.71 | CA2 (0.55) | CA1CA2EPHX1 | |
| SCHEMBL23886640 | 0.70 | CA2 (0.53) | CA1CA2EPHX1 | |
| SCHEMBL9982903 | 0.70 | CA2 (0.53) | CA1CA2EPHX1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8092978-B2 | Positive resist composition for electron beam, X-ray or EUV and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2012-01-10 | — | — | US | disclosed |
| US-20100028803-A1 | SURFACE TREATING AGENT FOR RESIST PATTERN FORMATION, RESIST COMPOSITION, METHOD OF TREATING SURFACE OF RESIST PATTERN THEREWITH AND METHOD OF FORMING RESIST PATTERN | FUJIFILM CORPORATION (JP) | 2010-02-04 | — | — | US | disclosed |
| US-20090246685-A1 | POSITIVE RESIST COMPOSITION FOR ELECTRON BEAM, X-RAY OR EUV AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2009-10-01 | — | — | US | disclosed |
| US-20090011362-A1 | PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2009-01-08 | — | — | US | disclosed |