SCHEMBL10141524

SCHEMBL10141524

CCCCCCCCCCCCCCCCCCCCOc1ccc(C(O)(C(F)(F)F)C(F)(F)F)cc1

nearest known ligand 0.57

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
▸ NR5A1 Q13285 1/20 0.57
▸ NR1H2 P55055 4/20 0.53
▸ NR1H3 Q13133 4/20 0.53
▸ TP53 P04637 2/20 0.51
▸ TSHR P16473 1/20 0.51
▸ LTA4H P09960 2/20 0.50
▸ PLA2G4B P0C869 1/20 0.50
▸ PDK2 Q15119 2/20 0.48
▸ RARB P10826 3/20 0.48
▸ NPC1 O15118 1/20 0.48
▸ LMNA P02545 1/20 0.48
▸ GAA P10253 1/20 0.48
▸ MAPT P10636 1/20 0.48
▸ ALOX15 P16050 1/20 0.48
▸ RAB9A P51151 1/20 0.48
▸ HSD17B10 Q99714 1/20 0.48

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12215164 0.88 NR5A1 (0.49) NR5A1NR1H2NR1H3TP53TSHR
SCHEMBL10141532 0.88 NR5A1 (0.49) NR5A1NR1H2NR1H3TP53TSHR
SCHEMBL14382086 0.83 NR5A1 (0.59) NR5A1TP53TSHRLTA4HPLA2G4B
SCHEMBL17518295 0.83 NR5A1 (0.59) NR5A1TP53TSHRLTA4HPLA2G4B
SCHEMBL28423723 0.81 NR5A1 (0.56) NR5A1TP53TSHRLTA4HPLA2G4B
SCHEMBL8936597 0.78 NR5A1 (0.79) NR5A1TP53TSHRLTA4HPLA2G4B
SCHEMBL11095674 0.78 NR5A1 (0.79) NR5A1TP53TSHRLTA4HPLA2G4B
SCHEMBL1573968 0.78 NR5A1 (0.79) NR5A1TP53TSHRLTA4HPLA2G4B
SCHEMBL2829024 0.78 NR5A1 (0.79) NR5A1TP53TSHRLTA4HPLA2G4B
SCHEMBL10943900 0.78 NR5A1 (0.79) NR5A1TP53TSHRLTA4HPLA2G4B

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 24 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9798235-B2 Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same FUJIFILM CORPORATION (JP) 2017-10-24 — — US disclosed
US-9798235-B2 Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same FUJIFILM CORPORATION (JP) 2017-10-24 — — US disclosed
US-20170255098-A1 POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME FUJIFILM CORPORATION (JP) 2017-09-07 — — US disclosed
US-20170255098-A1 POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME FUJIFILM CORPORATION (JP) 2017-09-07 — — US disclosed
US-9703196-B2 Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same FUJIFILM CORPORATION (JP) 2017-07-11 — — US disclosed
US-9703196-B2 Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same FUJIFILM CORPORATION (JP) 2017-07-11 — — US disclosed
US-20160370701-A1 POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME FUJIFILM CORPORATION (JP) 2016-12-22 — — US disclosed
US-20160370701-A1 POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME FUJIFILM CORPORATION (JP) 2016-12-22 — — US disclosed
US-9465292-B2 Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same FUJIFILM CORPORATION (JP) 2016-10-11 — — US disclosed
US-20160187780-A1 POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME FUJIFILM CORPORATION (JP) 2016-06-30 — — US disclosed
US-8828643-B2 Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same FUJIFILM CORPORATION (JP) 2014-09-09 — — US disclosed
US-8828643-B2 Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same FUJIFILM CORPORATION (JP) 2014-09-09 — — US disclosed
US-20130177850-A1 POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME FUJIFILM CORPORATION (JP) 2013-07-11 — — US disclosed
US-20130177850-A1 POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME FUJIFILM CORPORATION (JP) 2013-07-11 — — US disclosed
US-8426109-B2 Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same FUJIFILM CORPORATION (JP) 2013-04-23 — — US disclosed
US-8426109-B2 Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same FUJIFILM CORPORATION (JP) 2013-04-23 — — US disclosed
US-20120015293-A1 POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME FUJIFILM CORPORATION (JP) 2012-01-19 — — US disclosed
US-8039197-B2 Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same FUJIFILM CORPORATION (JP) 2011-10-18 — — US disclosed
US-20090181323-A1 POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME FUJIFILM CORPORATION (JP) 2009-07-16 — — US disclosed
US-7531287-B2 Suitable to liquid immersion exposure capable of suppressing the formation of development defects and scums, with preferably less leaching of resist ingredients to the liquid immersion solution upon pattern formation by liquid immersion exposure FUJIFILM CORPORATION (JP) 2009-05-12 — — US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20170255098-A1 POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME POLR2H, POLQ, RXRA NR5A1 3188/4885NR1H2 1482/4885NR1H3 1420/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.

Send feedback