SCHEMBL10148388

SCHEMBL10148388

CCC(C)c1ccc(OC(C)(C)C)c(Br)c1

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 6/20 0.39
GAA P10253 3/20 0.39
USP2 O75604 1/20 0.39
PKM P14618 1/20 0.39
HPGD P15428 1/20 0.39
ALOX15 P16050 1/20 0.39
HSD17B10 Q99714 1/20 0.39
LMNA P02545 2/20 0.36
TP53 P04637 2/20 0.36
MAPT P10636 2/20 0.36
ALOX12 P18054 1/20 0.36
HDAC4 P56524 1/20 0.34
HDAC2 Q92769 1/20 0.34
HDAC8 Q9BY41 1/20 0.34
NPC1 O15118 1/20 0.34
RAB9A P51151 1/20 0.34
TSHR P16473 2/20 0.33
MEN1 O00255 1/20 0.33
MAPK1 P28482 1/20 0.33
KMT2A Q03164 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15219451 0.86 ALDH1A1 (0.43) ALDH1A1GAAUSP2PKMHPGD
SCHEMBL10182749 0.86 ALDH1A1 (0.43) ALDH1A1GAAUSP2PKMHPGD
SCHEMBL16379411 0.82 ALDH1A1 (0.40) ALDH1A1GAAUSP2PKMHPGD
SCHEMBL130183 0.81 ALDH1A1 (0.48) ALDH1A1GAAUSP2PKMHPGD
SCHEMBL16379412 0.81 ALDH1A1 (0.50) ALDH1A1GAAUSP2PKMHPGD
SCHEMBL13918205 0.81 PDE2A (0.46) ALDH1A1GAAUSP2PKMHPGD
SCHEMBL5842824 0.79 ALDH1A1 (0.40) ALDH1A1GAAUSP2PKMHPGD
SCHEMBL10148389 0.79 GAA (0.37) ALDH1A1GAAUSP2PKMHPGD
SCHEMBL12807833 0.78 ALDH1A1 (0.37) ALDH1A1GAAUSP2PKMHPGD
SCHEMBL13918207 0.78 ALDH1A1 (0.32) ALDH1A1GAAUSP2PKMHPGD

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8092976-B2 High resolution, reduced pattern falling, and good sensitivity and good dissolution contrast achieved even in EUV (extreme ultra violet) exposure, reduction in the line edge roughness FUJIFILM CORPORATION (JP) 2012-01-10 US disclosed
US-7794916-B2 Positive photosensitive composition, polymer compound used for the positive photosensitive composition, production method of the polymer compound, and pattern forming method using the positive photosensitive composition FUJIFILM CORPORATION (JP) 2010-09-14 US disclosed
US-7718344-B2 microlithography; ultrafine processing of semiconductor using electron beam, X-ray or deep UV; high sensitivity, high resolution and good line edge roughness; suppression of vaporized outgas; a polystyrene with an acid-decomposable group; 10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate FUJIFILM CORPORATION (JP) 2010-05-18 US disclosed
US-7629107-B2 Positive photosensitive composition, polymer compounds for use in the positive photosensitive composition, manufacturing method of the polymer compounds, compounds for use in the manufacture of the polymer compounds, and pattern-forming method using the positive photosensitive composition FUJIFILM CORPORATION (JP) 2009-12-08 US disclosed
US-7541131-B2 Resist composition, compound for use in the resist composition and pattern forming method using the resist composition FUJIFILM CORPORATION (JP) 2009-06-02 US disclosed
US-20080187863-A1 POSITIVE PHOTOSENSITIVE COMPOSITION, POLYMER COMPOUND USED FOR THE POSITIVE PHOTOSENSITIVE COMPOSITION, PRODUCTION METHOD OF THE POLYMER COMPOUND, AND PATTERN FORMING METHOD USING THE POSITIVE PHOTOSENSITIVE COMPOSITION FUJIFILM CORPORATION (JP) 2008-08-07 US disclosed
US-20080085464-A1 POSITIVE PHOTOSENSITIVE COMPOSITION, POLYMER COMPOUNDS FOR USE IN THE POSITIVE PHOTOSENSITIVE COMPOSITION, MANUFACTURING METHOD OF THE POLYMER COMPOUNDS, COMPOUNDS FOR USE IN THE MANUFACTURE OF THE POLYMER COMPOUNDS, AND PATTERN-FORMING METHOD USING THE POSITIVE PHOTOSENSITIVE COMPOSITION FUJIFILM CORPORATION (JP) 2008-04-10 US disclosed
US-20080085468-A1 microlithography; ultrafine processing of semiconductor using electron beam, X-ray or deep UV; high sensitivity, high resolution and good line edge roughness; suppression of vaporized outgas; a polystyrene with an acid-decomposable group; 10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate FUJIFILM CORPORATION (JP) 2008-04-10 US disclosed
US-20080081282-A1 RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-04-03 US disclosed