⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL111551 | 0.88 | — | — | |
| SCHEMBL14087118 | 0.84 | — | — | |
| SCHEMBL12889898 | 0.82 | — | — | |
| SCHEMBL14487519 | 0.81 | MEN1 (0.30) | — | |
| SCHEMBL2681397 | 0.79 | EPHX1 (0.35) | — | |
| SCHEMBL13103989 | 0.78 | — | — | |
| SCHEMBL21074753 | 0.78 | — | — | |
| SCHEMBL30663530 | 0.78 | LMNA (0.33) | — | |
| SCHEMBL14266981 | 0.77 | MEN1 (0.30) | — | |
| SCHEMBL13359051 | 0.77 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 25 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9709892-B2 | Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the same | FUJIFILM CORPORATION (JP) | 2017-07-18 | — | — | US | disclosed |
| US-20130017377-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE SAME | FUJIFILM CORPORATION (JP) | 2013-01-17 | — | — | US | disclosed |
| US-8241833-B2 | Positive resist composition and pattern-forming method using the same | FUJIFILM CORPORATION (JP) | 2012-08-14 | — | — | US | disclosed |
| US-8092976-B2 | High resolution, reduced pattern falling, and good sensitivity and good dissolution contrast achieved even in EUV (extreme ultra violet) exposure, reduction in the line edge roughness | FUJIFILM CORPORATION (JP) | 2012-01-10 | — | — | US | disclosed |
| US-7977029-B2 | Positive photosensitive composition | FUJIFILM CORPORATION (JP) | 2011-07-12 | — | — | US | disclosed |
| US-20100310991-A1 | POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE AND PATTERN-FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2010-12-09 | — | — | US | disclosed |
| US-20100297553-A1 | POSITIVE RESIST COMPOSITION AND PATTERN-FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2010-11-25 | — | — | US | disclosed |
| US-7811740-B2 | comprising acrylate resin having a monocyclic or polycyclic alicyclic hydrocarbon structure, and a surfactant containing a fluorine compound or fluorine containing polyethers; resist pattern with good sensitivity, resolution, adhesion, and little in development defects; for an immersion exposure | FUJIFILM CORPORATION (JP) | 2010-10-12 | — | — | US | disclosed |
| US-7803511-B2 | resin containing acrylic ester monomers capable of increasing solubility in alkali developer by action of acid, acid generator, aryldicycloalkylsulfonium compounds, and nonionic surfactant; semiconductors, integrated circuits | FUJIFILM CORPORATION (JP) | 2010-09-28 | — | — | US | disclosed |
| US-RE41580-E1 | Lactone-containing compounds, polymers, resist compositions, and patterning method | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-08-24 | — | — | US | disclosed |
| US-7335454-B2 | Positive resist composition | FUJIFILM CORPORATION (JP) | 2008-02-26 | — | — | US | disclosed |
| US-7326516-B2 | Resist composition for immersion exposure and pattern formation method using the same | FUJIFILM CORPORATION (JP) | 2008-02-05 | — | — | US | disclosed |
| US-7255971-B2 | Positive resist composition | FUJIFILM CORPORATION (JP) | 2007-08-14 | — | — | US | disclosed |
| US-7235341-B2 | Positive resist composition | FUJIFILM CORPORATION (JP) | 2007-06-26 | — | — | US | disclosed |
| US-20070141513-A1 | Positive photosensitive composition | FUJI PHOTO FILM CO., LTD. | 2007-06-21 | — | — | US | disclosed |
| US-7214467-B2 | Photosensitive resin composition | FUJIFILM CORPORATION (JP) | 2007-05-08 | — | — | US | disclosed |
| US-7214465-B2 | Positive photosensitive composition | FUJIFILM CORPORATION (JP) | 2007-05-08 | — | — | US | disclosed |
| US-7202015-B2 | Positive photoresist composition and pattern making method using the same | FUJI PHOTO FILM CO., LTD. (JP) | 2007-04-10 | — | — | US | disclosed |
| US-7192681-B2 | Positive photosensitive composition | FUJI PHOTO FILM CO., LTD. (JP) | 2007-03-20 | — | — | US | disclosed |
| US-20070042290-A1 | resin containing acrylic ester monomers capable of increasing solubility in alkali developer by action of acid, acid generator, aryldicycloalkylsulfonium compounds, and nonionic surfactant; semiconductors, integrated circuits | FUJI PHOTO FILM CO., LTD. | 2007-02-22 | — | — | US | disclosed |