⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1879862 | 0.78 | — | — | |
| SCHEMBL29483881 | 0.67 | — | — | |
| SCHEMBL13182909 | 0.67 | — | — | |
| SCHEMBL22234184 | 0.67 | — | — | |
| SCHEMBL23498935 | 0.67 | — | — | |
| SCHEMBL24438989 | 0.67 | — | — | |
| SCHEMBL3112270 | 0.67 | — | — | |
| SCHEMBL4893281 | 0.67 | — | — | |
| SCHEMBL15293162 | 0.67 | — | — | |
| Hydrochloric Acid SCHEMBL30399691 | 0.65 | GABRR1 (0.31) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 51 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11914295-B2 | Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-02-27 | — | — | US | disclosed |
| US-20230333472-A1 | THERMOSETTING IODINE- AND SILICON-CONTAINING MATERIAL, COMPOSITION CONTAINING THE MATERIAL FOR FORMING RESIST UNDERLAYER FILM FOR EUV LITHOGRAPHY, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-10-19 | — | — | US | disclosed |
| US-20230305405-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING METAL HARD MASK AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-28 | — | — | US | disclosed |
| US-20230244149-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-08-03 | — | — | US | disclosed |
| US-9902875-B2 | Composition for forming a coating type BPSG film, substrate, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-02-27 | — | — | US | disclosed |
| US-9880470-B2 | Composition for forming a coating type silicon-containing film, substrate, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-01-30 | — | — | US | disclosed |
| US-20160096977-A1 | COMPOSITION FOR FORMING A COATING TYPE SILICON-CONTAINING FILM, SUBSTRATE, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-04-07 | — | — | US | disclosed |
| US-20160096978-A1 | COMPOSITION FOR FORMING A COATING TYPE BPSG FILM, SUBSTRATE, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-04-07 | — | — | US | disclosed |
| US-20160064220-A1 | METHOD FOR PRODUCING SEMICONDUCTOR APPARATUS SUBSTRATE | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-03-03 | — | — | US | disclosed |
| US-20160064220-A1 | METHOD FOR PRODUCING SEMICONDUCTOR APPARATUS SUBSTRATE | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-03-03 | — | — | US | disclosed |
| US-7585613-B2 | comprising light absorbing silicone resin, acid generator generates acid upon exposure to radiation; photoresist pattern cover the antireflection film with a vertical wall profile, without intermixing, less damage to an underlying layer | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-09-08 | — | — | US | disclosed |
| US-20090011372-A1 | SILICON-CONTAINING FILM-FORMING COMPOSITION, SILICON-CONTAINING FILM, SILICON-CONTAINING FILM-BEARING SUBSTRATE, AND PATTERNING METHOD | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-01-08 | — | — | US | disclosed |
| US-20080274432-A1 | SILICONE-CONTAINING FILM-FORMING COMPOSITION, SILICON-CONTAINING FILM, SILICON-CONTAINING FILM-BEARING SUBSTRATE, AND PATTERNING METHOD | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-11-06 | — | — | US | disclosed |
| US-20080026322-A1 | Hydrolytic condensation of organosilicon compound using acid and basic catalyst with Group 1a hydroxide, organic acid and solvent; efficiency patterning photoresist film | SHIN-ETSU CHEMICAL CO., LTD. | 2008-01-31 | — | — | US | disclosed |
| US-7303785-B2 | Antireflective film material, and antireflective film and pattern formation method using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-12-04 | — | — | US | disclosed |
| US-20070238300-A1 | Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method | SHIN-ETSU CHEMICAL CO., LTD. | 2007-10-11 | — | — | US | disclosed |
| US-20070172759-A1 | Antireflection film composition, substrate, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-07-26 | — | — | US | disclosed |
| US-20070128886-A1 | Substrate, method for producing the same, and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-06-07 | — | — | US | disclosed |
| US-20070117411-A1 | Rework process for photoresist film | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-05-24 | — | — | US | disclosed |
| US-20070111134-A1 | solvent remove the first photoresist film, forming a second photoresist film over the second antireflection silicone resin film which is over the first antireflection silicone resin film; lower cost and provide an excellent resist pattern | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-05-17 | — | — | US | disclosed |