⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL10159755 | 0.88 | — | — | |
| SCHEMBL5412494 | 0.86 | — | — | |
| SCHEMBL10159661 | 0.86 | — | — | |
| SCHEMBL13588249 | 0.85 | — | — | |
| SCHEMBL13924934 | 0.84 | — | — | |
| SCHEMBL10159621 | 0.84 | — | — | |
| SCHEMBL23254337 | 0.84 | KDM4E (0.31) | — | |
| SCHEMBL15492912 | 0.84 | KDM4E (0.31) | — | |
| SCHEMBL15683097 | 0.84 | KDM4E (0.31) | — | |
| SCHEMBL15219196 | 0.84 | KDM4E (0.31) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 70 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9927708-B2 | Pattern forming process and shrink agent | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-03-27 | — | — | US | disclosed |
| US-20170226250-A1 | POLYMER, RESIST COMPOSITION, AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-08-10 | — | — | US | disclosed |
| US-20170226250-A1 | POLYMER, RESIST COMPOSITION, AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-08-10 | — | — | US | disclosed |
| US-9658532-B2 | Pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-05-23 | — | — | US | disclosed |
| US-9658532-B2 | Pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-05-23 | — | — | US | disclosed |
| US-9632415-B2 | Pattern forming process and shrink agent | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-04-25 | — | — | US | disclosed |
| US-9632415-B2 | Pattern forming process and shrink agent | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-04-25 | — | — | US | disclosed |
| US-9618850-B2 | Pattern forming process and shrink agent | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-04-11 | — | — | US | disclosed |
| US-9618850-B2 | Pattern forming process and shrink agent | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-04-11 | — | — | US | disclosed |
| US-20170097567-A1 | METHOD FOR PRODUCING POLYMER | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-04-06 | — | — | US | disclosed |
| US-20090053657-A1 | PATTERNING PROCESS AND PATTERN SURFACE COATING COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-02-26 | — | — | US | disclosed |
| US-20090053657-A1 | PATTERNING PROCESS AND PATTERN SURFACE COATING COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-02-26 | — | — | US | disclosed |
| US-20090053651-A1 | PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-02-26 | — | — | US | disclosed |
| US-20090053651-A1 | PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-02-26 | — | — | US | disclosed |
| US-20080227037-A1 | Resist lower layer film composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-09-18 | — | — | US | disclosed |
| US-20080227037-A1 | Resist lower layer film composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-09-18 | — | — | US | disclosed |
| US-20080220381-A1 | Antireflection film composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-09-11 | — | — | US | disclosed |
| US-20080220381-A1 | Antireflection film composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-09-11 | — | — | US | disclosed |
| US-20080199806-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-08-21 | — | — | US | disclosed |
| US-20080199806-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-08-21 | — | — | US | disclosed |