SCHEMBL10183246

SCHEMBL10183246

CC1C2CC(C(=O)OCC(F)(F)F)C(C2)C1C

nearest known ligand 0.35

Predicted protein targets (top 10)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 4/20 0.35
TP53 P04637 1/20 0.35
GAA P10253 1/20 0.35
CYP2D6 P10635 1/20 0.35
CYP2C19 P33261 1/20 0.35
HTT P42858 1/20 0.34
FABP7 O15540 1/20 0.33
L3MBTL1 Q9Y468 1/20 0.31
MAPT P10636 1/20 0.31
ELANE P08246 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12939382 0.88
SCHEMBL13744624 0.88
SCHEMBL12939405 0.87
SCHEMBL2681346 0.87
SCHEMBL12939403 0.86
SCHEMBL12939402 0.86
SCHEMBL2680925 0.86 TP53 (0.30) TP53
SCHEMBL12939380 0.85 ALDH1A1 (0.40) ALDH1A1GAAL3MBTL1
SCHEMBL12216048 0.85
SCHEMBL13744389 0.84

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9568824-B2 Actinic-ray- or radiation-sensitive resin composition, resist film therefrom and method of forming pattern therewith FUJIFILM CORPORATION (JP) 2017-02-14 US disclosed
US-20120249995-A1 RESIST PROTECTIVE FILM MATERIAL AND PATTERN FORMATION METHOD SHIN-ETSU CHEMICAL CO. LTD. (JP) 2012-10-04 US disclosed
US-20120034559-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM THEREFROM AND METHOD OF FORMING PATTERN THEREWITH FUJIFILM CORPORATION (JP) 2012-02-09 US disclosed
US-7622242-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-11-24 US disclosed
US-7569323-B2 Resist protective coating material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-08-04 US disclosed
US-20090081588-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-03-26 US disclosed
US-20070026341-A1 Resist protective coating material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-02-01 US disclosed