Predicted protein targets (top 6)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | APOBEC3A | P31941 | 1/20 | 0.32 |
| ▸ | APOBEC3G | Q9HC16 | 1/20 | 0.32 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.31 |
| ▸ | HTT | P42858 | 1/20 | 0.31 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.31 |
| ▸ | CYP19A1 | P11511 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL16273468 | 0.90 | HMGCR (0.30) | — | |
| SCHEMBL19098990 | 0.89 | — | — | |
| SCHEMBL2754864 | 0.88 | — | — | |
| SCHEMBL17853838 | 0.88 | — | — | |
| SCHEMBL17532396 | 0.86 | CHRM1 (0.32) | — | |
| SCHEMBL18253482 | 0.86 | — | — | |
| SCHEMBL18253387 | 0.86 | — | — | |
| SCHEMBL18253361 | 0.84 | — | — | |
| SCHEMBL13933768 | 0.83 | — | — | |
| SCHEMBL24009323 | 0.82 | MLYCD (0.31) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 94 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20180210339-A1 | RESIST COMPOSITION, AND RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE, EACH USING RESIST COMPOSITION | FUJIFILM CORPORATION (JP) | 2018-07-26 | — | — | US | disclosed |
| US-20180180996-A1 | PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND LAMINATE | FUJIFILM CORPORATION (JP) | 2018-06-28 | — | — | US | disclosed |
| US-20180181003-A1 | PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND LAMINATE | FUJIFILM CORPORATION (JP) | 2018-06-28 | — | — | US | disclosed |
| US-9996003-B2 | Active-light-sensitive or radiation-sensitive resin composition, pattern forming method, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2018-06-12 | — | — | US | disclosed |
| US-9952509-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2018-04-24 | — | — | US | disclosed |
| US-20180011406-A1 | PATTERN FORMING METHOD, RESIST PATTERN, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND COMPOSITION FOR FORMING UPPER LAYER FILM | FUJIFILM CORPORATION (JP) | 2018-01-11 | — | — | US | disclosed |
| US-20170351179-A1 | COMPOSITION FOR FORMING UPPER LAYER FILM, PATTERN FORMING METHOD USING THE SAME, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-12-07 | — | — | US | disclosed |
| US-9810981-B2 | Pattern formation method, etching method, electronic device manufacturing method, and electronic device | FUJIFILM CORPORATION (JP) | 2017-11-07 | — | — | US | disclosed |
| US-20170285482-A1 | ORGANIC PROCESSING LIQUID AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2017-10-05 | — | — | US | disclosed |
| US-20170283587-A1 | CURABLE COMPOSITION, INFRARED CUT FILTER WITH LIGHT-SHIELDING FILM, AND SOLID-STATE IMAGING DEVICE | FUJIFILM CORPORATION (JP) | 2017-10-05 | — | — | US | disclosed |
| US-8053161-B2 | Improved in line edge roughness not only in ordinary exposure (dry exposure) but also in immersion exposure | FUJIFILM CORPORATION (JP) | 2011-11-08 | — | — | US | disclosed |
| US-7785767-B2 | photoresist films suitable for immersion exposure, comprising non-aromatic olefin polymers, acid generators, solvents and acrylic polymers or vinyl ether polymers, having good followability for water, improved profile and pattern collapse | FUJIFILM CORPORATION (JP) | 2010-08-31 | — | — | US | disclosed |
| US-7666574-B2 | Positive resist composition and pattern forming method | FUJIFILM CORPORATION (JP) | 2010-02-23 | — | — | US | disclosed |
| US-20090239176-A1 | RESIN FOR HYDROPHOBITIZING RESIST SURFACE, METHOD FOR MANUFACTURING THE RESIN, AND POSITIVE RESIST COMPOSITION CONTAINING THE RESIN | FUJIFILM CORPORATION (JP) | 2009-09-24 | — | — | US | disclosed |
| US-7550250-B2 | Resin having a monocyclic or polycyclic alicyclic hydrocarbon structure, of which solubility in an alkali developer increases under an action of an acid, a photoacid generator, methacrylic resins having hydrolysable ester groups and solvent; profiles; pattern collapse; immersion exposure; ARF lasers | FUJIFILM CORPORATION (JP) | 2009-06-23 | — | — | US | disclosed |
| US-20090098485-A1 | photoresist films suitable for immersion exposure, comprising non-aromatic olefin polymers, acid generators, solvents and acrylic polymers or vinyl ether polymers, having good followability for water, improved profile and pattern collapse | FUJIFILM CORPORATION (JP) | 2009-04-16 | — | — | US | disclosed |
| US-20080241746-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2008-10-02 | — | — | US | disclosed |
| US-20080227025-A1 | Localized on resist film; peak area of a high molecular weight; flowability of immersion liquid in patterning by exposure; prevention of coating and development defects; resin has perfluoroalkyl, fluorinated alcohol, alkylsilyl structure, cyclic siloxane, sulfonimido and/or bis(carbonyl)methylene groups | FUJIFILM CORPORATION (JP) | 2008-09-18 | — | — | US | disclosed |
| US-20080081290-A1 | RESIST COMPOSITION, RESIN FOR USE IN THE RESIST COMPOSITION, COMPOUND FOR USE IN THE SYNTHESIS OF THE RESIN, AND PATTERN-FORMING METHOD USING THE RESIST COMPOSITION | FUJIFILM CORPORATION (JP) | 2008-04-03 | — | — | US | disclosed |
| US-20070148595-A1 | Resin having a monocyclic or polycyclic alicyclic hydrocarbon structure, of which solubility in an alkali developer increases under an action of an acid, a photoacid generator, methacrylic resins having hydrolysable ester groups and solvent; profiles; pattern collapse; immersion exposure; ARF lasers | FUJIFILM CORPORATION (JP) | 2007-06-28 | — | — | US | disclosed |