SCHEMBL10189210

SCHEMBL10189210

CCC(C)C(=O)OC(CC)(CC)CCCC(F)(F)F

nearest known ligand 0.32

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
CA1 P00915 1/20 0.32
CA2 P00918 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14682150 0.85 CA1 (0.38) CA1CA2
SCHEMBL17052476 0.83 CA1 (0.37) CA1CA2
SCHEMBL824368 0.83 HTT (0.33)
SCHEMBL10304077 0.80 KDM4E (0.31)
SCHEMBL824401 0.79 LMNA (0.33)
SCHEMBL15214095 0.79 LMNA (0.33)
SCHEMBL15214093 0.79 MAPT (0.31)
SCHEMBL13232014 0.78 MAPT (0.30)
SCHEMBL10304139 0.78 LMNA (0.32)
SCHEMBL28737991 0.78 CA1 (0.40) CA1CA2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9459528-B2 Negative tone resist composition for solvent developing and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2016-10-04 US disclosed
US-20140363770-A1 NEGATIVE TONE RESIST COMPOSITION FOR SOLVENT DEVELOPING AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2014-12-11 US disclosed
US-8632960-B2 Method of forming resist pattern and negative tone-development resist composition TOKYO OHKA KOGYO CO., LTD. (JP) 2014-01-21 US disclosed
US-8530598-B2 Resist composition for immersion exposure, method of forming resist pattern, and fluorine-containing resin TOKYO OHKA KOGYO CO., LTD. (JP) 2013-09-10 US disclosed
US-8247161-B2 Resist composition for immersion exposure, method of forming resist pattern, and fluorine-containing resin TOKYO OHKA KOGYO CO., LTD. (JP) 2012-08-21 US disclosed
US-20120116038-A1 RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN, AND FLUORINE-CONTAINING RESIN TAKESHITA MASARU (JP) 2012-05-10 US disclosed
US-20110262864-A1 Method of forming resist pattern and negative tone-development resist composition TOKYO OHKA KOGYO CO., LTD. (JP) 2011-10-27 US disclosed
US-20100143844-A1 Resist composition for immersion exposure, method of forming resist pattern, and fluorine-containing resin TOKYO OHKA KOGYO CO., LTD. (JP) 2010-06-10 US disclosed