SCHEMBL10247913

SCHEMBL10247913

CCC(C)(C)C(=O)OC12CC3CC(OC=O)(C1)CC(C)(C2)C(=O)O3

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL111597 0.85
SCHEMBL110379 0.82
SCHEMBL13402443 0.80
SCHEMBL15801342 0.78
SCHEMBL14355195 0.78
SCHEMBL19696683 0.76 PTPN1 (0.31)
SCHEMBL13817674 0.74 L3MBTL1 (0.30)
SCHEMBL110381 0.72
SCHEMBL2618627 0.71
SCHEMBL111524 0.70

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20170176858-A1 PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2017-06-22 US disclosed
US-20140170564-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESING COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM USING THE COMPOSITION, AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2014-06-19 US disclosed
US-20120076996-A1 RESIST COMPOSITION, RESIST FILM THEREFROM AND METHOD OF FORMING PATTERN THEREWITH FUJIFILM CORPORATION (JP) 2012-03-29 US disclosed