SCHEMBL10330472

SCHEMBL10330472

CCC(C)(C)C(=O)OCc1ccc2cc(OCC(=O)OCC(F)(F)C(F)(F)F)ccc2c1

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 2/20 0.40
KDM4E B2RXH2 3/20 0.37
POLB P06746 2/20 0.37
LMNA P02545 1/20 0.37
GAA P10253 3/20 0.36
MAPT P10636 2/20 0.36
RAB9A P51151 2/20 0.36
NPC1 O15118 1/20 0.36
XBP1 P17861 1/20 0.36
SMN1; SMN2 Q16637 1/20 0.36
TDP1 Q9NUW8 1/20 0.36
PPARG P37231 1/20 0.34
NCOA2 Q15596 1/20 0.34
NCOA1 Q15788 1/20 0.34
CTDSP1 Q9GZU7 1/20 0.34
NCOA3 Q9Y6Q9 1/20 0.34
MAOB P27338 3/20 0.34
HSD17B10 Q99714 2/20 0.34
HPGD P15428 2/20 0.34
TP53 P04637 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2608024 0.92 ALDH1A1 (0.41) ALDH1A1KDM4EPOLBLMNAGAA
SCHEMBL14649830 0.92 GAA (0.44) ALDH1A1KDM4EPOLBLMNAGAA
SCHEMBL14787954 0.90 GAA (0.45) ALDH1A1KDM4EPOLBLMNAGAA
SCHEMBL12212725 0.87 ALDH1A1 (0.42) ALDH1A1KDM4ELMNAGAAMAPT
SCHEMBL13396215 0.86 ALDH1A1 (0.36) ALDH1A1KDM4EPOLBLMNAGAA
SCHEMBL13558194 0.86 ALDH1A1 (0.36) ALDH1A1KDM4EPOLBLMNAGAA
SCHEMBL13558202 0.85 ALDH1A1 (0.38) ALDH1A1KDM4EPOLBLMNAGAA
SCHEMBL14826047 0.84 ALDH1A1 (0.38) ALDH1A1KDM4EPOLBLMNAGAA
SCHEMBL10330470 0.83 ALDH1A1 (0.40) ALDH1A1KDM4EPOLBLMNAGAA
SCHEMBL13396224 0.83 ALDH1A1 (0.40) ALDH1A1KDM4EPOLBLMNAGAA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8367297-B2 Resist composition, method of forming resist pattern, novel compound and acid generator TOKYO OHKA KOGYO CO., LTD. (JP) 2013-02-05 US disclosed
US-8338075-B2 Base component which exhibits increased solubility in an alkali developing solution under the action of acid, an acid generator, and organic solvent having a boiling point of at least 150 degrees C.; hole-like resist pattern can be formed with a high level of resolution and minute dimensions TOKYO OHKA KOGYO CO., LTD. (JP) 2012-12-25 US disclosed
US-8221956-B2 Resist composition for immersion exposure, method of forming resist pattern, and flourine-containing polymeric compound TOKYO OHKA KOGYO CO., LTD. (JP) 2012-07-17 US disclosed
US-20090317743-A1 Resist composition for immersion exposure, method of forming resist pattern, and flourine-containing polymeric compound TOKYO OHKA KOGYO CO., LTD. 2009-12-24 US disclosed