SCHEMBL1047710

SCHEMBL1047710

CC(C)(N)C([SiH3])[SiH3]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5508982 0.70
SCHEMBL16268502 0.67
SCHEMBL163513 0.67
SCHEMBL15141903 0.67 ALDH1A1 (0.33)
SCHEMBL2876586 0.64
Hydrochloric Acid SCHEMBL2187615 0.64
SCHEMBL14025077 0.64
Ammonia Solution, Strong SCHEMBL2784565 0.64
SCHEMBL21100089 0.64
Ammonia Solution, Strong SCHEMBL7500908 0.64

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 60 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20250313953-A1 METHODS AND SYSTEMS FOR FORMING DOPED SILICON NITRIDE FILMS ASM IP HOLDING B.V. (NL) 2025-10-09 US claimed
US-20250297360-A1 SUBSTRATE PROCESSING METHOD ASM IP HOLDING B.V. (NL) 2025-09-25 US claimed
US-12392038-B2 Thin-film deposition method and system ASM IP HOLDING B.V. (NL) 2025-08-19 US claimed
US-20250253145-A1 SUBSTRATE PROCESSING METHOD ASM IP HOLDING B.V. (NL) 2025-08-07 US claimed
US-12378667-B2 Methods and systems for forming doped silicon nitride films ASM IP HOLDING B.V. (NL) 2025-08-05 US claimed
US-20230126516-A1 METHODS AND SYSTEMS FOR FORMING DOPED SILICON NITRIDE FILMS ASM IP HOLDING B.V. (NL) 2023-04-27 US claimed
US-20230089397-A1 AIR GAP FORMING METHOD AND SELECTIVE DEPOSITION METHOD ASM IP HOLDING B.V. (NL) 2023-03-23 US claimed
US-9887080-B2 Method of forming SiOCN material layer and method of fabricating semiconductor device SAMSUNG ELECTRONICS CO., LTD. (KR) 2018-02-06 US claimed
US-20170186603-A1 METHOD OF FORMING SiOCN MATERIAL LAYER AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE SAMSUNG ELECTRONICS CO., LTD. (KR) 2017-06-29 US claimed
JP-2010539730-A 2010-12-16 JP claimed
EP-2193541-A1 METHOD OF FORMING SILICON-CONTAINING FILMS L'AIR LIQUIDE, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude (FR) 2010-06-09 EP claimed
WO-2009039251-A1 METHOD OF FORMING SILICON-CONTAINING FILMS L'AIR LIQUIDE - SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE (FR) 2009-03-26 WO claimed
US-20090075490-A1 METHOD OF FORMING SILICON-CONTAINING FILMS L'AIR LIQUITE SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE (FR) 2009-03-19 US claimed
US-20260092360-A1 CYCLICAL DEPOSITION METHOD INCLUDING TREATMENT STEP AND APPARATUS FOR SAME ASM IP HOLDING BV (NL) 2026-04-02 US disclosed
US-20250313953-A1 METHODS AND SYSTEMS FOR FORMING DOPED SILICON NITRIDE FILMS ASM IP HOLDING B.V. (NL) 2025-10-09 US disclosed
US-20250297360-A1 SUBSTRATE PROCESSING METHOD ASM IP HOLDING B.V. (NL) 2025-09-25 US disclosed
US-20080058541-A1 Stabilization of nitrogen-containing and oxygen-containing organosilanes using weakly basic ion-exchange resins VERSUM MATERIALS US, LLC 2008-03-06 US disclosed
EP-1894934-A1 Stabilization of Nitrogen-Containing and Oxygen-Containing Organosilanes Using Weakly Basic Ion-Exchange Resins Air Products and Chemicals, Inc. (US) 2008-03-05 EP disclosed
EP-1724373-A1 Precursors for cvd silicon carbo-nitride films Air Products and Chemicals, Inc. (US) 2006-11-22 EP disclosed
US-20060258173-A1 Precursors for CVD silicon carbo-nitride films VERSUM MATERIALS US, LLC 2006-11-16 US disclosed