Cetrimonium

Cetrimonium

SCHEMBL1052351

CCCCCCCCCCCCCCCC[N+](C)(C)C.O=C(O)C(=O)O

nearest known ligand 0.71

Full drug profile on Sugi Atlas →

Known targets — ChEMBL curated mechanism

OPRM1SLC6A4

The experimentally established mechanism targets of Cetrimonium. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ DNM1 Q05193 8/20 0.71
▸ APAF1 O14727 1/20 0.65
▸ HSP90AA1 P07900 1/20 0.65
▸ RAD52 P43351 1/20 0.65
▸ MEN1 O00255 4/20 0.52
▸ KMT2A Q03164 4/20 0.52
▸ APEX1 P27695 3/20 0.52
▸ NFKB1 P19838 2/20 0.52
▸ KDM4E B2RXH2 2/20 0.52
▸ ACHE P22303 2/20 0.52
▸ SMN1; SMN2 Q16637 2/20 0.52
▸ PMP22 Q01453 2/20 0.52
▸ LMNA P02545 2/20 0.52
▸ HSD17B10 Q99714 1/20 0.52
▸ HRH3 Q9Y5N1 1/20 0.52
▸ TSHR P16473 1/20 0.52
▸ RAB9A P51151 1/20 0.52
▸ NPSR1 Q6W5P4 1/20 0.50
▸ HTT P42858 1/20 0.50
▸ SLC22A1 O15245 1/20 0.48

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Oxalic Acid SCHEMBL8438194 1.00 DNM1 (0.71) DNM1APAF1HSP90AA1RAD52MEN1
Oxalic Acid SCHEMBL8434736 1.00 DNM1 (0.71) DNM1APAF1HSP90AA1RAD52MEN1
Oxalic Acid SCHEMBL479519 1.00 DNM1 (0.71) DNM1APAF1HSP90AA1RAD52MEN1
Bicarbonate SCHEMBL9724758 0.93 DNM1 (0.75) DNM1APAF1HSP90AA1RAD52MEN1
Bicarbonate SCHEMBL17199724 0.93 DNM1 (0.75) DNM1APAF1HSP90AA1RAD52MEN1
Cetrimonium SCHEMBL9739307 0.93 DNM1 (0.75) DNM1APAF1HSP90AA1RAD52MEN1
Bicarbonate SCHEMBL5157446 0.93 DNM1 (0.75) DNM1APAF1HSP90AA1RAD52MEN1
Bicarbonate SCHEMBL17199718 0.93 DNM1 (0.75) DNM1APAF1HSP90AA1RAD52MEN1
Bicarbonate SCHEMBL28963225 0.93 DNM1 (0.75) DNM1APAF1HSP90AA1RAD52MEN1
Bicarbonate SCHEMBL27839094 0.93 DNM1 (0.75) DNM1APAF1HSP90AA1RAD52MEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-101633673-B Method for preparing oxaliplatin Nanjing pharmaceutical factory co ltd 2012-01-11 — — CN disclosed
US-7867471-B2 Process for preparing advanced ceramic powders using onium dicarboxylates SACHEM, INC. (US) 2011-01-11 — — US disclosed
US-20100129728-A1 ALLOY CATALYST FOR FUEL CELL CATHODE ASAHI KASEI KABUSHIKI KAISHA (JP) 2010-05-27 — — US disclosed
CN-101633673-A Method for preparing oxaliplatin Nanjing pharmaceutical factory 2010-01-27 — — CN disclosed
US-20090250850-A1 PROCESS FOR PREPARING ADVANCED CERAMIC POWDERS USING ONIUM DICARBOXYLATES SACHEM, INC. 2009-10-08 — — US disclosed
EP-1947718-A1 ALLOY CATALYST FOR FUEL CELL CATHODE Asahi Kasei Kogyo Kabushiki Kaisha (JP) 2008-07-23 — — EP disclosed
US-7341775-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO. LTD. (JP) 2008-03-11 — — US disclosed
CN-100349981-C Porous mebrane shaping composition, porous membrane manufacturing method, porous membrane, intercalation insulating film and semiconductor device SHINETSU CHEMICAL CO (JP) 2007-11-21 — — CN disclosed
US-20060289849-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. 2006-12-28 — — US disclosed
US-7119354-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-10-10 — — US disclosed
EP-1580804-A1 COMPOSITION FOR POROUS FILM FORMATION, POROUS FILMS, PROCESS FOR PRODUCTION OF THE FILMS, INTERLAYER DIELECTRICS, AND SEMICONDUCTOR DEVICES MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-09-28 — — EP disclosed
US-20040235971-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-11-25 — — US disclosed
US-20040201007-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. 2004-10-14 — — US disclosed
CN-1536024-A Porous mebrane shaping composition, porous membrane manufacturing method, porous membrane, intercalation insulating film and semiconductor device ��Խ��ѧ��ҵ��ʽ���� 2004-10-13 — — CN disclosed
US-5933693-A Electroconductive elastic member and electrophotographic apparatus using same BRIDGESTONE CORPORATION (JP) 1999-08-03 — — US disclosed
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