Valeric Acid

Valeric Acid

SCHEMBL105271

CCCCC(=O)[O-].C[N+](C)(C)C

nearest known ligand 0.80

Full drug profile on Sugi Atlas →

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
CA1 P00915 1/20 0.80
BBOX1 O75936 3/20 0.58
FFAR3 O14843 2/20 0.57
HDAC3 O15379 2/20 0.57
HDAC1 Q13547 2/20 0.57
HDAC2 Q92769 2/20 0.57
HDAC8 Q9BY41 2/20 0.57
CES1 P23141 2/20 0.57
CES2 O00748 1/20 0.57
FABP3 P05413 6/20 0.54
NFKB1 P19838 1/20 0.52

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Hexanoate SCHEMBL105666 0.92 CA1 (0.68) CA1BBOX1CES1CES2FABP3
Valeric Acid SCHEMBL11815174 0.92 CA1 (0.94) CA1FFAR3HDAC3HDAC1HDAC2
Octanoic Acid SCHEMBL108744 0.90 FABP3 (0.67) CA1BBOX1CES1CES2FABP3
Nonanoate SCHEMBL106670 0.90 FABP3 (0.67) CA1BBOX1CES1CES2FABP3
Heptanoate SCHEMBL108336 0.90 FABP3 (0.67) CA1BBOX1CES1CES2FABP3
Stearic Acid SCHEMBL109193 0.90 FABP3 (0.67) CA1BBOX1CES1CES2FABP3
Heptadecanoic Acid SCHEMBL7549840 0.90 FABP3 (0.67) CA1BBOX1CES1CES2FABP3
Dodecanoate SCHEMBL5153809 0.90 FABP3 (0.67) CA1BBOX1CES1CES2FABP3
Myristic Acid SCHEMBL5154017 0.90 FABP3 (0.67) CA1BBOX1CES1CES2FABP3
Palmitic Acid SCHEMBL5155811 0.90 FABP3 (0.67) CA1BBOX1CES1CES2FABP3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 54 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-3144332-B1 NEW TRIMER CATALYST ADDITIVES FOR IMPROVING FOAM PROCESSABILITY EVONIK OPERATIONS GMBH (DE) 2020-10-21 EP disclosed
EP-2426558-B1 Silicon-containing film-forming composition, silicon-containing film-formed substrate, and patterning process SHINETSU CHEMICAL CO (JP) 2018-10-24 EP disclosed
US-9878318-B2 Trimer catalyst additives for improving foam processability EVONIK DEGUSSA GMBH (DE) 2018-01-30 US disclosed
EP-2500775-B1 PATTERNING PROCESS AND COMPOSITION FOR FORMING SILICON-CONTAINING FILM USABLE THEREFOR SHINETSU CHEMICAL CO (JP) 2018-01-03 EP disclosed
EP-3144332-A1 NEW TRIMER CATALYST ADDITIVES FOR IMPROVING FOAM PROCESSABILITY AIR PRODUCTS AND CHEMICALS, INC. (US) 2017-03-22 EP disclosed
EP-1852450-B1 New trimer catalyst additives for improving foam processability AIR PROD & CHEM (US) 2016-12-14 EP disclosed
US-8951711-B2 Patterning process and composition for forming silicon-containing film usable therefor SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-02-10 US disclosed
US-20140342289-A1 PATTERNING PROCESS AND COMPOSITION FOR FORMING SILICON-CONTAINING FILM USABLE THEREFOR SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-11-20 US disclosed
US-8852844-B2 Composition for forming silicon-containing film, silicon-containing film-formed substrate and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-10-07 US disclosed
US-8835102-B2 Patterning process and composition for forming silicon-containing film usable therefor SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-09-16 US disclosed
US-20070259773-A1 Trimer catalyst additives for improving foam processability EVONIK OPERATIONS GMBH (DE) 2007-11-08 US disclosed
EP-1852450-A2 New trimer catalyst additives for improving foam processability Air Products and Chemicals, Inc. (US) 2007-11-07 EP disclosed
EP-1845132-A2 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method Shinetsu Chemical Co., Ltd. (JP) 2007-10-17 EP disclosed
US-20070238300-A1 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method SHIN-ETSU CHEMICAL CO., LTD. 2007-10-11 US disclosed
US-20070135565-A1 COMPOSITION FOR FORMING POROUS FILM, POROUS FILM AND METHOD FOR FORMING THE SAME, INTERLEVEL INSULATOR FILM, AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2007-06-14 US disclosed
US-7132473-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2006-11-07 US disclosed
US-7128976-B2 Composition for film formation, method of film formation, and silica-based film JSR CORPORATION (JP) 2006-10-31 US disclosed
EP-1568744-A1 COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-08-31 EP disclosed
US-20040219372-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-11-04 US disclosed
US-20030091838-A1 Composition for film formation, method of film formation, and silica-based film JSR CORPORATION (JP) 2003-05-15 US disclosed