Butyl Alcohol

Butyl Alcohol

SCHEMBL1052989

CCCCO.O=CO

nearest known ligand 0.00

Full drug profile on Sugi Atlas →

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Butyl Alcohol SCHEMBL11050931 0.97
Butyl Alcohol SCHEMBL28030425 0.94 ALDH1A1 (0.61)
1-Pentanol SCHEMBL2034248 0.91 SMN1; SMN2 (0.71)
Butyl Alcohol SCHEMBL28316568 0.89 ALDH1A1 (0.55)
Butyl Alcohol SCHEMBL17673151 0.89 ALDH1A1 (0.55)
Octanol SCHEMBL28176901 0.88 TSHR (0.72)
Cetyl Alcohol SCHEMBL8359228 0.88 TSHR (0.72)
1-Hexanol SCHEMBL1047802 0.88 TSHR (0.72)
Tridecan-1-Ol SCHEMBL9863316 0.88 TSHR (0.72)
Butyl Alcohol SCHEMBL5963005 0.88

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 31 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11898073-B2 Semiconductor nanocrystal and preparation method thereof SAMSUNG ELECTRONICS CO., LTD. (KR) 2024-02-13 US disclosed
EP-3715318-B1 METHOD FOR PREPARATION OF A SEMICONDUCTOR NANOCRYSTAL SAMSUNG ELECTRONICS CO LTD (KR) 2023-10-04 EP disclosed
US-20200399532-A1 SEMICONDUCTOR NANOCRYSTAL AND PREPARATION METHOD THEREOF SAMSUNG ELECTRONICS CO LTD (KR) 2020-12-24 US disclosed
EP-3715318-A1 METHOD FOR PREPARATION OF A SEMICONDUCTOR NANOCRYSTAL Samsung Electronics Co., Ltd. (KR) 2020-09-30 EP disclosed
US-10759992-B2 Semiconductor nanocrystal and preparation method thereof SAMSUNG ELECTRONICS CO., LTD. (KR) 2020-09-01 US disclosed
US-10392559-B2 Preparation method of nanocrystals coated with metal-surfactant layers SAMSUNG ELECTRONICS CO., LTD. (KR) 2019-08-27 US disclosed
CN-106748826-B N, N, N '-trimethyl-N '-ethoxy-ethylenediamine the preparation method 四川之江高新材料股份有限公司 2018-05-29 CN disclosed
CN-106748831-B The synthetic method of N, N- dimethyldiglycolamine 四川之江高新材料股份有限公司 2018-05-29 CN disclosed
CN-104774252-B Transcription factor PtoMYB115 of specific regulatory tannin synthesis and application thereof 西南大学 2018-02-06 CN disclosed
US-20170152436-A1 SEMICONDUCTOR NANOCRYSTAL AND PREPARATION METHOD THEREOF SAMSUNG ELECTRONICS CO., LTD. (KR) 2017-06-01 US disclosed
US-20110315954-A1 SEMICONDUCTOR NANOCRYSTAL, METHOD OF MANUFACTURE THEREOF AND ARTICLES INCLUDING THE SAME SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-12-29 US disclosed
US-20110240922-A1 SEMICONDUCTOR NANOCRYSTAL AND METHOD OF PREPARING THE SAME SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-10-06 US disclosed
CN-101244896-B Corrosion-resistant and pollution-proof coating for mirror surface of solar glass mirror and preparation method thereof SHANGHAI INST CERAMICS 2011-10-05 CN disclosed
US-20110201593-A1 TRICYCLIC HETEROCYCLIC COMPOUNDS, COMPOSITIONS AND METHODS OF USE THEREOF GENENTECH, INC. (US) 2011-08-18 US disclosed
US-20110006281-A1 SEMICONDUCTOR NANOCRYSTAL AND PREPARATION METHOD THEREOF SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-01-13 US disclosed
WO-2011005023-A2 SEMICONDUCTOR NANOCRYSTAL AND PREPARATION METHOD THEREOF SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-01-13 WO disclosed
US-20100159249-A1 PREPARATION METHOD OF NANOCRYSTALS COATED WITH METAL-SURFACTANT LAYERS SAMSUNG ELECTRONICS CO., LTD. (KR) 2010-06-24 US disclosed
CN-101443325-A 2, 4 -diamino pyrimidines as cell cycle kinase inhibitors SANOFI AVENTIS DEUTSCHLAND (DE) 2009-05-27 CN disclosed
CN-101244896-A Corrosion-resistant and pollution-proof coating for mirror surface of solar glass mirror and preparation method thereof SHANGHAI INST SILICATE CAS (CN) 2008-08-20 CN disclosed
CN-1187516-A Ink special for big character jetting device DALIAN INST DALIAN CHEMICAL GR (CN) 1998-07-15 CN disclosed