SCHEMBL1053907

SCHEMBL1053907

NCCCCCCC(=O)OCc1ccccc1[N+](=O)[O-]

nearest known ligand 0.45

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
MAOB P27338 1/20 0.45
ALDH1A1 P00352 7/20 0.43
HTT P42858 1/20 0.43
TSHR P16473 1/20 0.42
KAT2B Q92831 2/20 0.42
BCHE P06276 1/20 0.41
ACHE P22303 1/20 0.41
L3MBTL1 Q9Y468 2/20 0.40
MEN1 O00255 2/20 0.40
KMT2A Q03164 2/20 0.40
MAPT P10636 1/20 0.40
TDP1 Q9NUW8 1/20 0.39
HPGD P15428 1/20 0.39
LMNA P02545 1/20 0.39
APP P05067 1/20 0.39
GLA P06280 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8079883 1.00 MAOB (0.45) MAOBALDH1A1HTTTSHRKAT2B
SCHEMBL3612598 1.00 MAOB (0.45) MAOBALDH1A1HTTTSHRKAT2B
SCHEMBL1057909 0.95 MAOB (0.47) MAOBALDH1A1HTTTSHRKAT2B
SCHEMBL9508856 0.93 MAOB (0.50) MAOBALDH1A1HTTTSHRBCHE
SCHEMBL6865967 0.90 MAOB (0.50) MAOBALDH1A1HTTTSHRL3MBTL1
SCHEMBL4074486 0.88 MAOB (0.46) MAOBALDH1A1HTTTSHRBCHE
SCHEMBL4531780 0.88 MAOB (0.49) MAOBALDH1A1HTTTSHRBCHE
SCHEMBL4532746 0.88 MAOB (0.46) MAOBALDH1A1HTTTSHRBCHE
SCHEMBL10400395 0.87 ALDH1A1 (0.50) MAOBALDH1A1HTTBCHEACHE
SCHEMBL10400145 0.87 ALDH1A1 (0.50) MAOBALDH1A1HTTBCHEACHE

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 17 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240030030-A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND COMPOSITION JSR CORPORATION (JP) 2024-01-25 US disclosed
US-20240021429-A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND COMPOSITION JSR CORPORATION (JP) 2024-01-18 US disclosed
WO-2022209816-A1 METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM JSR株式会社 2022-10-06 WO disclosed
WO-2022202402-A1 SEMICONDUCTOR SUBSTRATE PRODUCTION METHOD AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM JSR株式会社 2022-09-29 WO disclosed
US-10162260-B2 Photosensitive resin composition, protective film, and liquid crystal display element CHI MEI CORPORATION (TW) 2018-12-25 US disclosed
US-20180356725-A1 RADIATION-SENSITIVE COMPOSITION AND PATTERN-FORMING METHOD JSR CORPORATION (JP) 2018-12-13 US disclosed
US-20170168390-A1 PHOTOSENSITIVE RESIN COMPOSITION, PROTECTIVE FILM, AND LIQUID CRYSTAL DISPLAY ELEMENT CHI MEI CORPORATION (TW) 2017-06-15 US disclosed
EP-1662322-B1 Positive type photo-sensitive siloxane composition, curing film formed by the composition and device with the curing film TORAY INDUSTRIES (JP) 2017-01-11 EP disclosed
US-20160299376-A1 LIQUID CRYSTAL DISPLAY DEVICE, RADIATION-SENSITIVE RESIN COMPOSITION, INTERLAYER INSULATING FILM, METHOD FOR PRODUCING INTERLAYER INSULATING FILM, AND METHOD FOR MANUFACTURING LIQUID CRYSTAL DISPLAY DEVICE JSR CORPORATION (JP) 2016-10-13 US disclosed
US-9091920-B2 Photosensitive siloxane resin composition MERCK PATENT GMBH (DE) 2015-07-28 US disclosed
US-20140335448-A1 PHOTOSENSITIVE SILOXANE RESIN COMPOSITION AZ ELECTRONIC MATERIALS USA CORP. (US) 2014-11-13 US disclosed
US-8486604-B2 Positive-type radiation-sensitive composition, cured film, interlayer insulating film, method of forming interlayer insulating film, display device, and siloxane polymer for forming interlayer insulating film JSR CORPORATION (JP) 2013-07-16 US disclosed
US-20110008730-A1 POSITIVE-TYPE RADIATION-SENSITIVE COMPOSITION, CURED FILM, INTERLAYER INSULATING FILM, METHOD OF FORMING INTERLAYER INSULATING FILM, DISPLAY DEVICE, AND SILOXANE POLYMER FOR FORMING INTERLAYER INSULATING FILM JSR CORPORATION (JP) 2011-01-13 US disclosed
US-7374856-B2 Positive type photo-sensitive siloxane composition, cured film formed from the composition and device incorporating the cured film TORAY INDUSTRIES, INC. (JP) 2008-05-20 US disclosed
US-20060115766-A1 Positive type photo-sensitive siloxane composition, cured film formed from the composition and device incorporating the cured film TORAY INDUSTRIES, INC. (JP) 2006-06-01 US disclosed
EP-1662322-A2 Positive type photo-sensitive siloxane composition, curing film formed by the composition and device with the curing film TORAY INDUSTRIES, INC. (JP) 2006-05-31 EP disclosed
US-6180320-B1 Method of manufacturing a semiconductor device having a fine pattern, and semiconductor device manufactured thereby MITSUBISHI DENKI KABUSHIKI KAISHA (JP) 2001-01-30 US disclosed