Fluoride

Fluoride

SCHEMBL1055336

CC(O)CN.F

nearest known ligand 0.00

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⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Fluoride SCHEMBL29094701 1.00
SCHEMBL9387 0.96
SCHEMBL54903 0.96
Hydroxyamine SCHEMBL27483582 0.96
SCHEMBL362926 0.96
SCHEMBL5036885 0.96 ALDH1A1 (0.50)
Hydrochloric Acid SCHEMBL11081542 0.92
Water SCHEMBL1690382 0.92
Hydrochloric Acid SCHEMBL3270812 0.92
Ammonia Solution, Strong SCHEMBL16619615 0.92

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 91 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12557622-B2 Method for fabricating a semiconductor device with a composite barrier structure NANYA TECHNOLOGY CORPORATION (TW) 2026-02-17 US claimed
US-12341054-B2 Method for fabricating semiconductor device with chelating agent NANYA TECHNOLOGY CORPORATION (TW) 2025-06-24 US claimed
CN-119812512-A Aqueous zinc ion battery electrolyte and application thereof 铜陵学院 2025-04-11 CN claimed
CN-117524975-A Method for manufacturing semiconductor device 南亚科技股份有限公司 2024-02-06 CN claimed
CN-116895517-A Semiconductor device and method for manufacturing the same 南亚科技股份有限公司 2023-10-17 CN claimed
US-20230317514-A1 SEMICONDUCTOR DEVICE WITH COMPOSITE BARRIER STRUCTURE AND METHOD FOR FABRICATING THE SAME NANYA TECHNOLOGY CORPORATION (TW) 2023-10-05 US claimed
US-20230317508-A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH PRE-CLEANING TREATMENT NANYA TECHNOLOGY CORPORATION (TW) 2023-10-05 US claimed
US-20040009883-A1 Resist stripping composition MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2004-01-15 US claimed
US-12575404-B2 Semiconductor device with protection layer and method for fabricating the same NANYA TECHNOLOGY CORPORATION (TW) 2026-03-10 US disclosed
US-20260055238-A1 RESIN COMPOSITION FOR SEALING STATOR AND METHOD FOR DISASSEMBLING STATOR SUMITOMO BAKELITE CO., LTD. (JP) 2026-02-26 US disclosed
US-12557622-B2 Method for fabricating a semiconductor device with a composite barrier structure NANYA TECHNOLOGY CORPORATION (TW) 2026-02-17 US disclosed
US-20260040912-A1 SEMICONDUCTOR DEVICE WITH ISOLATION STRUCTURE AND METHOD FOR FABRICATING THE SAME NANYA TECHNOLOGY CORP (TW) 2026-02-05 US disclosed
US-20260040913-A1 SEMICONDUCTOR DEVICE WITH ISOLATION STRUCTURE AND METHOD FOR FABRICATING THE SAME NANYA TECHNOLOGY CORP (TW) 2026-02-05 US disclosed
US-12489014-B2 Method for fabricating semiconductor device with multi-carbon-concentration dielectrics NANYA TECHNOLOGY CORPORATION (TW) 2025-12-02 US disclosed
CN-1184299-C Photoresist cleaning composition MITSUBISHI GAS CHEMICAL K K (JP) 2005-01-12 CN disclosed
US-20040029753-A1 Resist stripping liquid containing fluorine compound MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2004-02-12 US disclosed
US-20040009883-A1 Resist stripping composition MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2004-01-15 US disclosed
US-6372410-B1 FOR USE IN PRODUCTION OF SEMICONDUCTOR INTEGRATED CIRCUITS; FOR REMOVING RESIST RESIDUES REMAINING AFTER ETCHING OR ASHING MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2002-04-16 US disclosed
CN-1296064-A Photoresist cleaning composition MITSUBISHI GAS CHEMICAL K K (JP) 2001-05-23 CN disclosed
EP-1091254-A2 Resist stripping composition MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2001-04-11 EP disclosed