SCHEMBL1055696

SCHEMBL1055696

[As].[Si]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8236297 1.00
SCHEMBL30030690 0.82
Charcoal, Activated SCHEMBL31474657 0.82
SCHEMBL11422432 0.82
SCHEMBL31474642 0.82
SCHEMBL1207928 0.82
SCHEMBL32675818 0.82
SCHEMBL31019848 0.82
SCHEMBL15913 0.71
SCHEMBL465227 0.71

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 658 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-110970302-B Method for forming semiconductor device 台湾积体电路制造股份有限公司 2025-05-02 CN claimed
CN-119425819-A Regeneration method of silicon-arsenic poisoning denitration catalyst 长春吉电能源科技有限公司 2025-02-14 CN claimed
US-20240321966-A1 DEVICE WITH EPITAXIAL SOURCE/DRAIN REGION TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2024-09-26 US claimed
CN-116217075-B Regulation and control slag and regulation and control method for vitrification treatment of dangerous solid wastes 广东飞南资源利用股份有限公司 2024-08-06 CN claimed
CN-118028619-A Combined leaching technology for zinc calcine and zinc oxide smoke dust 云南驰宏资源综合利用有限公司 2024-05-14 CN claimed
WO-2023226303-A1 LIGHT EMITTING CHIP EPITAXIAL STRUCTURE AND MANUFACTURING METHOD THEREFOR, LIGHT EMITTING CHIP AND DISPLAY PANEL 重庆康佳光电技术研究院有限公司 2023-11-30 WO claimed
CN-114351243-B Preparation method of N-type doped silicon single crystal and prepared doped silicon single crystal 山东有研半导体材料有限公司 2023-11-07 CN claimed
US-11777003-B2 Semiconductor structure with wraparound backside amorphous layer TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2023-10-03 US claimed
CN-116110923-B Method for preparing semiconductor structure and semiconductor structure 合肥新晶集成电路有限公司 2023-06-27 CN claimed
CN-116217075-A Regulation and control slag and regulation and control method for vitrification treatment of dangerous solid wastes 广东飞南资源利用股份有限公司 2023-06-06 CN claimed
CN-1164792-C Gas trapping device of chemical vapor deposition system 华邦电子股份有限公司 2004-09-01 CN claimed
US-6682983-B2 Method of forming a bottom electrode of a capacitor in a memory device NANYA TECHNOLOGY CORPORATION (TW) 2004-01-27 US claimed
US-20030181016-A1 METHOD OF FORMING A BOTTOM ELECTRODE OF A CAPACITOR IN A MEMORY DEVICE NANYA TECHNOLOGY CORPORATION 2003-09-25 US claimed
CN-1379120-A Gas trapping device of chemical vapor deposition system HUABANG ELECTRONIC CO LTD (CN) 2002-11-13 CN claimed
US-6218319-B1 PROVIDING GAS FLOW CONTAINING TETRAETHYLORTHOSILICATE (TEOS) INTO CHAMBER CONTAINING WAFERS TO BE PROCESSED AND SECOND TRIETHYLARSENATE GAS; FLOWING OXYGEN GAS TO FORM ARSENIC SILICON GLASS FILM ON WAFERS INTERNATIONAL BUSINESS MACHINES CORPORATION 2001-04-17 US claimed
EP-0977249-A2 An improved method of forming an arsenic silicon glass film onto a silicon structure INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2000-02-02 EP claimed
US-6001684-A Method for forming a capacitor SIEMENS AKTIENGESELLSCHAFT (DE) 1999-12-14 US claimed
US-5891906-A Polyacetate-derived phorboids having anti-inflammatory and other uses PROCYON PHARMACEUTICALS, INC. (US) 1999-04-06 US claimed
CN-1202004-A Integrated circuit fabrication method SIEMENS AG (DE) 1998-12-16 CN claimed
EP-0883168-A2 Method for fabricating a semiconductor memory capacitor SIEMENS AKTIENGESELLSCHAFT (DE) 1998-12-09 EP claimed