⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL28962129 | 1.00 | — | — | |
| SCHEMBL3295 | 1.00 | — | — | |
| SCHEMBL263439 | 1.00 | — | — | |
| SCHEMBL3294 | 1.00 | — | — | |
| SCHEMBL8089227 | 1.00 | — | — | |
| SCHEMBL10632871 | 1.00 | — | — | |
| SCHEMBL4352631 | 1.00 | — | — | |
| SCHEMBL131680 | 1.00 | — | — | |
| SCHEMBL8390528 | 1.00 | — | — | |
| SCHEMBL29402829 | 1.00 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 562 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12637616-B2 | Etching solution for selectively removing silicon-germanium alloy from a silicon-germanium/ silicon stack during manufacture of a semiconductor device | VERSUM MATERIALS US, LLC (US) | 2026-05-26 | — | — | US | claimed |
| WO-2025128253-A1 | METHODS FOR REDUCING PHOTORESIST AND CARBON ETCH RATES IN AN ICP PROCESS CHAMBER USING A SILICON-BASED CHAMBER PRE-COAT | APPLIED MATERIALS, INC. (US) | 2025-06-19 | — | — | WO | claimed |
| US-20250201573-A1 | METHODS FOR REDUCING PHOTORESIST AND CARBON ETCH RATES IN AN ICP PROCESS CHAMBER USING A SILICON-BASED CHAMBER PRE-COAT | APPLIED MATERIALS, INC. | 2025-06-19 | — | — | US | claimed |
| US-20240271040-A1 | Etching Solution For Selectively Removing Silicon-Germanium Alloy From A Silicon-Germanium/ Silicon Stack During Manufacture Of A Semiconductor Device | VERSUM MATERIALS US, LLC | 2024-08-15 | — | — | US | claimed |
| CN-117700963-A | Modified core-shell polymer master batch toughening reinforced thermoplastic composite material and preparation method thereof | 河南科高辐射化工科技有限公司 | 2024-03-15 | — | — | CN | claimed |
| EP-4323470-A1 | ETCHING SOLUTION FOR SELECTIVELY REMOVING SILICON-GERMANIUM ALLOY FROM A SILICON-GERMANIUM/ SILICON STACK DURING MANUFACTURE OF A SEMICONDUCTOR DEVICE | Versum Materials US, LLC (US) | 2024-02-21 | — | — | EP | claimed |
| CN-115124901-B | Corrosion-resistant capacitor coating and preparation method thereof | 苏州皇冠涂料科技发展有限公司 | 2023-12-08 | — | — | CN | claimed |
| CN-113903857-B | Capacitor, chip and preparation method of capacitor | 北京芯可鉴科技有限公司 | 2023-03-24 | — | — | CN | claimed |
| WO-2022246356-A1 | ETCHING SOLUTION FOR SELECTIVELY REMOVING SILICON-GERMANIUM ALLOY FROM A SILICON-GERMANIUM/ SILICON STACK DURING MANUFACTURE OF A SEMICONDUCTOR DEVICE | VERSUM MATERIALS US, LLC (US) | 2022-11-24 | — | — | WO | claimed |
| CN-115124901-A | Corrosion-resistant capacitor coating and preparation method thereof | 苏州皇冠涂料科技发展有限公司 | 2022-09-30 | — | — | CN | claimed |
| US-20010028859-A1 | Iron- based powder composition for powder metallurgy having higher flowability and highercompactibility and process fir production thereof | KAWASAKI STEEL CORPORATION | 2001-10-11 | — | — | US | claimed |
| US-6281146-B1 | Plasma enhanced chemical vapor deposition (PECVD) method for forming microelectronic layer with enhanced film thickness uniformity | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY (TW) | 2001-08-28 | — | — | US | claimed |
| US-6235076-B1 | LUBRICANT AND ALLOYING POWDER WITH SILANES, SILIZANES AND TITANATE COUPLERS | KAWASAKI STEEL CORPORATION (JP) | 2001-05-22 | — | — | US | claimed |
| US-6180490-B1 | Method of filling shallow trenches | CHARTERED SEMICONDUCTOR MANUFACTURING LTD. (SG) | 2001-01-30 | — | — | US | claimed |
| US-5989304-A | MIXTURE COMPRISING IRON AND ALLOYING POWDERS, BINDER, LUBRICANT, AND SURFACE TREATING AGENT WHICH COATS POWDER PARTICLES | KAWASAKI STEEL CORPORATION (JP) | 1999-11-23 | — | — | US | claimed |
| EP-0913220-A1 | IRON BASE POWDER MIXTURE FOR POWDER METALLURGY EXCELLENT IN FLUIDITY AND MOLDABILITY, METHOD OF PRODUCTION THEREOF, AND METHOD OF PRODUCTION OF MOLDED ARTICLE BY USING THE IRON BASE POWDER MIXTURE | Kawasaki Steel Corporation (JP) | 1999-05-06 | — | — | EP | claimed |
| EP-0853994-A1 | IRON-BASE POWDER MIXTURE FOR POWDER METALLURGY HAVING EXCELLENT FLUIDITY AND MOLDABILITY AND PROCESS FOR PREPARING THE SAME | KAWASAKI STEEL CORPORATION (JP) | 1998-07-22 | — | — | EP | claimed |
| US-5741740-A | Shallow trench isolation (STI) method employing gap filling silicon oxide dielectric layer | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 1998-04-21 | — | — | US | claimed |
| US-5231056-A | Silane and dichlorosilane reactants | MICRON TECHNOLOGY, INC. (US) | 1993-07-27 | — | — | US | claimed |
| CN-1042667-A | Composite semipermeable membrane and manufacture method thereof | SEPARATION DYNAMICS INC (US) | 1990-06-06 | — | — | CN | claimed |