⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL25240754 | 0.73 | — | — | |
| SCHEMBL4077371 | 0.72 | — | — | |
| SCHEMBL2104558 | 0.59 | — | — | |
| SCHEMBL11770251 | 0.59 | — | — | |
| SCHEMBL309944 | 0.59 | — | — | |
| SCHEMBL4887580 | 0.56 | — | — | |
| SCHEMBL20214199 | 0.56 | — | — | |
| SCHEMBL79425 | 0.55 | — | — | |
| SCHEMBL17423480 | 0.54 | — | — | |
| SCHEMBL331441 | 0.54 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11999827-B2 | Polycarbosilazane, and composition comprising the same, and method for producing silicon-containing film using the same | MERCK PATENT GMBH (DE) | 2024-06-04 | — | — | US | disclosed |
| EP-4146725-B1 | POLYCARBOSILAZANE, AND COMPOSITION COMPRISING THE SAME, AND METHOD FOR PRODUCING SILICON-CONTAINING FILM USING THE SAME | MERCK PATENT GMBH (DE) | 2024-05-22 | — | — | EP | disclosed |
| US-20230174724-A1 | POLYCARBOSILAZANE, AND COMPOSITION COMPRISING THE SAME, AND METHOD FOR PRODUCING SILICON-CONTAINING FILM USING THE SAME | MERCK PATENT GMBH (DE) | 2023-06-08 | — | — | US | disclosed |
| EP-1962336-B1 | Insulating film material and use thereof in a method for manufacturing a semiconductor device | FUJITSU LTD (JP) | 2012-06-27 | — | — | EP | disclosed |
| US-7875981-B2 | Insulating film material, multilayer interconnection structure, method for manufacturing same, and method for manufacturing semiconductor device | FUJITSU LIMITED (JP) | 2011-01-25 | — | — | US | disclosed |
| US-20080203574-A1 | Polysilsesquioxanes; wear resistance; etching resistance; dielectrics; reduced parasitic capacitance | FUJITSU LIMITED (JP) | 2008-08-28 | — | — | US | disclosed |
| EP-1962336-A2 | Insulating film material , multilayer interconnection structure, method for manufacturing the same and method for manufacturing semiconductor device | Fujitsu Ltd. (JP) | 2008-08-27 | — | — | EP | disclosed |