SCHEMBL10643108

SCHEMBL10643108

C=C(C)C(=O)Oc1ccc(O)c(O)c1

nearest known ligand 0.51

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ELANE P08246 1/20 0.51
KMT2A Q03164 2/20 0.47
ATM Q13315 1/20 0.47
CYP3A4 P08684 2/20 0.42
MAPT P10636 1/20 0.42
ALDH1A1 P00352 1/20 0.41
HPGD P15428 1/20 0.41
MAPK1 P28482 1/20 0.41
CA12 O43570 3/20 0.39
CA1 P00915 3/20 0.39
CA2 P00918 3/20 0.39
CA7 P43166 3/20 0.39
CA9 Q16790 3/20 0.39
CA14 Q9ULX7 3/20 0.39
XDH P47989 1/20 0.39
NPC1 O15118 1/20 0.38
RAB9A P51151 1/20 0.38
IAPP P10997 1/20 0.37
PTGS1 P23219 1/20 0.37
NQO2 P16083 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL31097938 1.00 ELANE (0.51) ELANEKMT2AATMCYP3A4MAPT
SCHEMBL23558904 0.93 ELANE (0.50) ELANEKMT2AATMCYP3A4MAPT
SCHEMBL23558930 0.90 ELANE (0.50) ELANEKMT2AATMCYP3A4MAPT
SCHEMBL23559178 0.89 ELANE (0.54) ELANEKMT2AATMMAPTCA12
SCHEMBL15496033 0.87 ELANE (0.50) ELANEKMT2AATMCYP3A4MAPT
SCHEMBL15388430 0.86 ELANE (0.49) ELANEKMT2AATMCYP3A4MAPT
SCHEMBL11963909 0.86 ELANE (0.49) ELANEKMT2AATMMAPTCA12
SCHEMBL15388793 0.86 ELANE (0.49) ELANEKMT2AATMCYP3A4MAPT
SCHEMBL5421764 0.85 CYP3A4 (0.44) CYP3A4MAPTALDH1A1HPGDMAPK1
SCHEMBL10705741 0.84 ELANE (0.47) ELANEKMT2AATMCYP3A4MAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240231231-A1 METHOD FOR FORMING RESIST UNDERLAYER FILM, METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, COMPOSITION, AND RESIST UNDERLAYER FILM JSR CORPORATION (JP) 2024-07-11 US disclosed
WO-2024127808-A1 RADIATION-SENSITIVE COMPOSITION AND METHOD FOR FORMING RESIST PATTERN JSR株式会社 2024-06-20 WO disclosed
US-20230384676-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING PATTERN, POLYMER, AND COMPOUND JSR CORPORATION (JP) 2023-11-30 US disclosed
US-20230384676-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING PATTERN, POLYMER, AND COMPOUND JSR CORPORATION (JP) 2023-11-30 US disclosed
US-20230305398-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-09-28 US disclosed
US-11640113-B2 Actinic ray-sensitive or radiation-sensitive resin composition, pattern forming method, and method of manufacturing electronic device FUJIFILM CORPORATION (JP) 2023-05-02 US disclosed
US-11640113-B2 Actinic ray-sensitive or radiation-sensitive resin composition, pattern forming method, and method of manufacturing electronic device FUJIFILM CORPORATION (JP) 2023-05-02 US disclosed
US-20230059089-A1 MATERIAL FOR FORMING ADHESIVE FILM, METHOD FOR FORMING ADHESIVE FILM USING THE SAME, AND PATTERNING PROCESS USING MATERIAL FOR FORMING ADHESIVE FILM SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-02-23 US disclosed
EP-4116770-A1 MATERIAL FOR FORMING ADHESIVE FILM, METHOD FOR FORMING ADHESIVE FILM USING THE SAME, AND PATTERNING PROCESS USING MATERIAL FOR FORMING ADHESIVE FILM Shin-Etsu Chemical Co., Ltd. (JP) 2023-01-11 EP disclosed
US-11327399-B2 Photoresist composition and process for producing photoresist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2022-05-10 US disclosed
US-20200218154-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-07-09 US disclosed
EP-3521926-A1 ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD AND METHOD FOR PRODUCING ELECTRONIC DEVICE FUJIFILM Corporation (JP) 2019-08-07 EP disclosed
US-20190219921-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, AND METHOD OF MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2019-07-18 US disclosed
EP-2101217-B1 Sulfonium salt-containing polymer, resist compositon, and patterning process SHINETSU CHEMICAL CO (JP) 2011-05-11 EP disclosed
EP-2101217-A1 Sulfonium salt-containing polymer, resist compositon, and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2009-09-16 EP disclosed
US-4739097-A Monoacrylates of trihydric phenols and method for producing same HOECHST AKTIENGESELLSCHAFT (DE) 1988-04-19 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20230384676-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING PATTERN, POLYMER, AND COMPOUND RER1, RFT1, RAD51 ELANE 2527/4885KMT2A 558/4885ATM 1111/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.