Predicted protein targets (top 11)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | NAAA | Q02083 | 1/20 | 0.47 |
| ▸ | CES2 | O00748 | 3/20 | 0.46 |
| ▸ | EPHX1 | P07099 | 3/20 | 0.44 |
| ▸ | TSHR | P16473 | 3/20 | 0.43 |
| ▸ | CES1 | P23141 | 2/20 | 0.42 |
| ▸ | HCAR2 | Q8TDS4 | 1/20 | 0.41 |
| ▸ | RAD52 | P43351 | 1/20 | 0.41 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.41 |
| ▸ | FAAH | O00519 | 4/20 | 0.40 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.40 |
| ▸ | LMNA | P02545 | 1/20 | 0.40 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL10225075 | 1.00 | NAAA (0.47) | NAAACES2EPHX1TSHRCES1 | |
| SCHEMBL13705958 | 1.00 | NAAA (0.47) | NAAACES2EPHX1TSHRCES1 | |
| SCHEMBL13705964 | 1.00 | NAAA (0.47) | NAAACES2EPHX1TSHRCES1 | |
| SCHEMBL13705968 | 1.00 | NAAA (0.47) | NAAACES2EPHX1TSHRCES1 | |
| SCHEMBL13705953 | 1.00 | NAAA (0.47) | NAAACES2EPHX1TSHRCES1 | |
| SCHEMBL13705962 | 1.00 | NAAA (0.47) | NAAACES2EPHX1TSHRCES1 | |
| SCHEMBL13705963 | 1.00 | NAAA (0.47) | NAAACES2EPHX1TSHRCES1 | |
| SCHEMBL13705955 | 1.00 | NAAA (0.47) | NAAACES2EPHX1TSHRCES1 | |
| SCHEMBL13705954 | 1.00 | NAAA (0.47) | NAAACES2EPHX1TSHRCES1 | |
| SCHEMBL13705952 | 0.98 | NAAA (0.44) | NAAACES2EPHX1TSHRCES1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 150 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-10031419-B2 | Pattern forming method, composition kit and resist film, manufacturing method of electronic device using these, and electronic device | FUJIFILM CORPORATION (JP) | 2018-07-24 | — | — | US | disclosed |
| US-20180120697-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION FILM USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2018-05-03 | — | — | US | disclosed |
| US-9929376-B2 | Laminate, kit for manufacturing organic semiconductor, and resist composition for manufacturing organic semiconductor | FUJIFILM CORPORATION (JP) | 2018-03-27 | — | — | US | disclosed |
| US-9829796-B2 | Pattern formation method, active light-sensitive or radiation-sensitive resin composition, resist film, production method for electronic device using same, and electronic device | FUJIFILM CORPORATION (JP) | 2017-11-28 | — | — | US | disclosed |
| US-20170153545-A1 | PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-06-01 | — | — | US | disclosed |
| US-9651863-B2 | Pattern forming method, active light sensitive or radiation sensitive resin composition, resist film, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2017-05-16 | — | — | US | disclosed |
| US-9651863-B2 | Pattern forming method, active light sensitive or radiation sensitive resin composition, resist film, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2017-05-16 | — | — | US | disclosed |
| US-20170121437-A1 | PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, ELECTRONIC DEVICE, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM AND MASK BLANK | FUJIFILM CORPORATION (JP) | 2017-05-04 | — | — | US | disclosed |
| US-9632410-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, resist-coated mask blank, photomask and pattern forming method, and method for producing electronic device using them, and electronic device | FUJIFILM CORPORATION (JP) | 2017-04-25 | — | — | US | disclosed |
| US-9612535-B2 | Pattern forming method, electron beam- or extreme ultraviolet-sensitive resin composition, resist film using the same, method of manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2017-04-04 | — | — | US | disclosed |
| US-20100248136-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2010-09-30 | — | — | US | disclosed |
| US-20100183979-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2010-07-22 | — | — | US | disclosed |
| US-20100183980-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2010-07-22 | — | — | US | disclosed |
| US-20100183980-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2010-07-22 | — | — | US | disclosed |
| US-20100136479-A1 | POSITIVE PHOTOSENSITIVE COMPOSITION | FUJIFILM CORPORATION (JP) | 2010-06-03 | — | — | US | disclosed |
| US-20100136479-A1 | POSITIVE PHOTOSENSITIVE COMPOSITION | FUJIFILM CORPORATION (JP) | 2010-06-03 | — | — | US | disclosed |
| US-20100028804-A1 | RESIST COMPOSITION AND METHOD OF FORMING PATTERN THEREWITH | FUJIFILM CORPORATION (JP) | 2010-02-04 | — | — | US | disclosed |
| US-20090325102-A1 | PHOTOSENSITIVE COMPOSITION AND PATTERN FORMING METHOD USING SAME | FUJIFILM CORPORATION (JP) | 2009-12-31 | — | — | US | disclosed |
| US-20090325103-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING SAME | FUJIFILM CORPORATION (JP) | 2009-12-31 | — | — | US | disclosed |
| US-20090220886-A1 | POLYHYDRIC COMPOUND AND CHEMICALLY AMPLIFIED RESIST COMPOSITION CONTAINING THE SAME | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2009-09-03 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20090220886-A1 | POLYHYDRIC COMPOUND AND CHEMICALLY AMPLIFIED RESIST COMPOSITION CONTAINING THE SAME | C5, C1R, H1-4 | NAAA 1697/4885CES2 4304/4885EPHX1 4418/4885 |
| US-20100136479-A1 | POSITIVE PHOTOSENSITIVE COMPOSITION | AFF1, F12, AFF2 | NAAA 2755/4885CES2 2485/4885EPHX1 2075/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.