Predicted protein targets (top 8)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | FFAR3 | O14843 | 2/20 | 0.35 |
| ▸ | HDAC3 | O15379 | 2/20 | 0.35 |
| ▸ | HDAC1 | Q13547 | 2/20 | 0.35 |
| ▸ | HDAC2 | Q92769 | 2/20 | 0.35 |
| ▸ | HDAC8 | Q9BY41 | 2/20 | 0.35 |
| ▸ | CES2 | O00748 | 1/20 | 0.33 |
| ▸ | CES1 | P23141 | 1/20 | 0.33 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL108936 | 0.96 | FFAR3 (0.35) | FFAR3HDAC3HDAC1HDAC2HDAC8 | |
| SCHEMBL109456 | 0.96 | FFAR3 (0.35) | FFAR3HDAC3HDAC1HDAC2HDAC8 | |
| SCHEMBL105780 | 0.90 | CA1 (0.34) | FFAR3HDAC3HDAC1HDAC2HDAC8 | |
| SCHEMBL105814 | 0.86 | CA1 (0.34) | FFAR3HDAC3HDAC1HDAC2HDAC8 | |
| SCHEMBL106031 | 0.86 | CA1 (0.34) | FFAR3HDAC3HDAC1HDAC2HDAC8 | |
| SCHEMBL105851 | 0.78 | FFAR3 (0.38) | FFAR3HDAC3HDAC1HDAC2HDAC8 | |
| SCHEMBL104420 | 0.74 | FFAR3 (0.38) | FFAR3HDAC3HDAC1HDAC2HDAC8 | |
| SCHEMBL104903 | 0.74 | FFAR3 (0.38) | FFAR3HDAC3HDAC1HDAC2HDAC8 | |
| SCHEMBL2384263 | 0.74 | FFAR3 (0.38) | FFAR3HDAC3HDAC1HDAC2HDAC8 | |
| SCHEMBL8468851 | 0.74 | FFAR3 (0.34) | FFAR3HDAC3HDAC1HDAC2HDAC8 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 44 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260044081-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-02-12 | — | — | US | disclosed |
| EP-4692941-A2 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2026-02-11 | — | — | EP | disclosed |
| CN-111856882-B | Composition for forming silicon-containing resist underlayer film and pattern forming method | 信越化学工业株式会社 | 2024-11-29 | — | — | CN | disclosed |
| EP-2518562-B1 | A patterning process | SHINETSU CHEMICAL CO (JP) | 2019-01-16 | — | — | EP | disclosed |
| EP-2426558-B1 | Silicon-containing film-forming composition, silicon-containing film-formed substrate, and patterning process | SHINETSU CHEMICAL CO (JP) | 2018-10-24 | — | — | EP | disclosed |
| EP-2500775-B1 | PATTERNING PROCESS AND COMPOSITION FOR FORMING SILICON-CONTAINING FILM USABLE THEREFOR | SHINETSU CHEMICAL CO (JP) | 2018-01-03 | — | — | EP | disclosed |
| EP-2540780-B1 | Composition for forming resist underlayer film and patterning process using the same | SHINETSU CHEMICAL CO (JP) | 2016-07-20 | — | — | EP | disclosed |
| US-9377690-B2 | Compositon for forming metal oxide-containing film and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-06-28 | — | — | US | disclosed |
| EP-2560049-B1 | Composition for forming a silicon-containing resist underlayer film and patterning process using the same | SHINETSU CHEMICAL CO (JP) | 2015-07-22 | — | — | EP | disclosed |
| US-9069247-B2 | Silicon-containing surface modifier, resist lower layer film-forming composition containing the same, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-06-30 | — | — | US | disclosed |
| US-20120052685-A1 | SILICON-CONTAINING FILM-FORMING COMPOSITION, SILICON-CONTAINING FILM-FORMED SUBSTRATE, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-03-01 | — | — | US | disclosed |
| US-8029974-B2 | Metal oxide-containing film-forming composition, metal oxide-containing film-formed substrate, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-10-04 | — | — | US | disclosed |
| US-8026038-B2 | Metal oxide-containing film-forming composition, metal oxide-containing film, metal oxide-containing film-bearing substrate, and patterning method | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-09-27 | — | — | US | disclosed |
| US-20100285407-A1 | Composition for forming a silicon-containing antireflection film, substrate having the silicon-containing antireflection film from the composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-11-11 | — | — | US | disclosed |
| US-20100147334-A1 | Coated-type silicon-containing film stripping process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-06-17 | — | — | US | disclosed |
| EP-2196858-A1 | Coated-type silicon-containing film stripping process | Shin-Etsu Chemical Co., Ltd. (JP) | 2010-06-16 | — | — | EP | disclosed |
| US-20100086872-A1 | Metal oxide-containing film-forming composition, metal oxide-containing film-formed substrate, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-04-08 | — | — | US | disclosed |
| EP-2172808-A1 | Metal oxide-containing film-forming composition metal oxide-containing film-formed substrate, and patterning process | Shinetsu Chemical Co., Ltd. (JP) | 2010-04-07 | — | — | EP | disclosed |
| US-20090136869-A1 | METAL OXIDE-CONTAINING FILM-FORMING COMPOSITION, METAL OXIDE-CONTAINING FILM, METAL OXIDE-CONTAINING FILM-BEARING SUBSTRATE, AND PATTERNING METHOD | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-05-28 | — | — | US | disclosed |
| EP-2063319-A1 | Metal oxide-containing film-forming composition, metal oxide-containing film, metal oxide-containing film-bearing substrate, and patterning method | Shin-Etsu Chemical Co., Ltd. (JP) | 2009-05-27 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20260044081-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | SMC1A, SPOUT1, LBR | FFAR3 110/4885HDAC3 2256/4885HDAC1 497/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.