⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL105558 | 0.96 | — | — | |
| SCHEMBL15333823 | 0.96 | — | — | |
| SCHEMBL106787 | 0.90 | ALDH1A1 (0.33) | — | |
| SCHEMBL106128 | 0.86 | ALDH1A1 (0.33) | — | |
| SCHEMBL1942208 | 0.86 | ALDH1A1 (0.33) | — | |
| SCHEMBL106110 | 0.78 | — | — | |
| SCHEMBL15334255 | 0.76 | — | — | |
| SCHEMBL2454763 | 0.76 | — | — | |
| SCHEMBL4292249 | 0.75 | — | — | |
| SCHEMBL6537205 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 52 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260044081-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-02-12 | — | — | US | disclosed |
| EP-4692941-A2 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2026-02-11 | — | — | EP | disclosed |
| US-20230408922-A1 | APPLICATION LIQUID FOR OPTICAL MEMBER, POLYMER, PHOTOSENSITIVE APPLICATION LIQUID, METHOD FOR PRODUCING CURED FILM, METHOD FOR PRODUCING PATTERNED CURED FILM, AND METHOD FOR PRODUCING POLYMER | CENTRAL GLASS COMPANY, LIMITED (JP) | 2023-12-21 | — | — | US | disclosed |
| US-11614686-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-03-28 | — | — | US | disclosed |
| US-20210200098-A1 | PATTERN FORMING METHOD AND RESIST LAMINATE FOR ORGANIC SOLVENT DEVELOPMENT | FUJIFILM CORPORATION (JP) | 2021-07-01 | — | — | US | disclosed |
| US-20190258160-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2019-08-22 | — | — | US | disclosed |
| US-20190025699-A1 | FILM-FORMING MATERIAL FOR RESIST PROCESS AND PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2019-01-24 | — | — | US | disclosed |
| EP-2518562-B1 | A patterning process | SHINETSU CHEMICAL CO (JP) | 2019-01-16 | — | — | EP | disclosed |
| EP-2426558-B1 | Silicon-containing film-forming composition, silicon-containing film-formed substrate, and patterning process | SHINETSU CHEMICAL CO (JP) | 2018-10-24 | — | — | EP | disclosed |
| US-20180081272-A1 | THERMAL CROSSLINKING ACCELERATOR, POLYSILOXANE-CONTAINING RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SAME, AND PATTERNING PROCESS USING SAME | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-03-22 | — | — | US | disclosed |
| US-20120238095-A1 | PATTERNING PROCESS AND COMPOSITION FOR FORMING SILICON-CONTAINING FILM USABLE THEREFOR | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-09-20 | — | — | US | disclosed |
| EP-2500775-A2 | Patterning process and composition for forming silicon-containing film usable therefor | Shin-Etsu Chemical Co., Ltd. (JP) | 2012-09-19 | — | — | EP | disclosed |
| EP-2426558-A1 | Silicon-containing film-forming composition, silicon-containing film-formed substrate, and patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2012-03-07 | — | — | EP | disclosed |
| US-20120052685-A1 | SILICON-CONTAINING FILM-FORMING COMPOSITION, SILICON-CONTAINING FILM-FORMED SUBSTRATE, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-03-01 | — | — | US | disclosed |
| US-8029974-B2 | Metal oxide-containing film-forming composition, metal oxide-containing film-formed substrate, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-10-04 | — | — | US | disclosed |
| US-20100285407-A1 | Composition for forming a silicon-containing antireflection film, substrate having the silicon-containing antireflection film from the composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-11-11 | — | — | US | disclosed |
| US-20100147334-A1 | Coated-type silicon-containing film stripping process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-06-17 | — | — | US | disclosed |
| EP-2196858-A1 | Coated-type silicon-containing film stripping process | Shin-Etsu Chemical Co., Ltd. (JP) | 2010-06-16 | — | — | EP | disclosed |
| US-20100086872-A1 | Metal oxide-containing film-forming composition, metal oxide-containing film-formed substrate, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-04-08 | — | — | US | disclosed |
| EP-2172808-A1 | Metal oxide-containing film-forming composition metal oxide-containing film-formed substrate, and patterning process | Shinetsu Chemical Co., Ltd. (JP) | 2010-04-07 | — | — | EP | disclosed |