SCHEMBL107738

SCHEMBL107738

CSc1c(F)c(F)c(C)c(F)c1F

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL16749588 0.92
SCHEMBL12410555 0.87
SCHEMBL22909568 0.85
SCHEMBL777119 0.83
SCHEMBL12410574 0.80
SCHEMBL18257690 0.78
SCHEMBL18257660 0.78 CA12 (0.31)
SCHEMBL12634235 0.78 CA12 (0.31)
SCHEMBL926802 0.75 TAS1R3 (0.35)
SCHEMBL24757177 0.75

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 28 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11710851-B2 Polymeric solid electrolyte and lithium secondary battery comprising same LG ENERGY SOLUTION, LTD. (KR) 2023-07-25 US disclosed
WO-2023118576-A1 DHODH INHIBITORS CONTAINING A CARBOXYLIC ACID BIOISOSTERE IMMUNIC AG (DE) 2023-06-29 WO disclosed
US-20160313645-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-10-27 US disclosed
US-9223219-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition and resist film FUJIFILM CORPORATION (JP) 2015-12-29 US disclosed
US-9116437-B2 Pattern forming method, chemical amplification resist composition and resist film FUJIFILM CORPORATION (JP) 2015-08-25 US disclosed
WO-2015076528-A1 POLYMER ELECTROLYTE MEMBRANE MAKING USE OF POLYMER COMPRISING AROMATIC RING HAVING PLURALITY OF HYDROXYL GROUPS, AND USE FOR SAME 한국화학연구원 2015-05-28 WO disclosed
US-8999621-B2 Pattern forming method, chemical amplification resist composition and resist film FUJIFILM CORPORATION (JP) 2015-04-07 US disclosed
US-8932794-B2 Positive photosensitive composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2015-01-13 US disclosed
US-8795944-B2 Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the composition FUJIFILM CORPORATION (JP) 2014-08-05 US disclosed
US-8771916-B2 Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2014-07-08 US disclosed
US-20120219910-A1 PHOTOSENSITIVE COMPOSITION AND PATTERN FORMING METHOD USING SAME FUJIFILM CORPORATION (JP) 2012-08-30 US disclosed
US-20120148957-A1 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2012-06-14 US disclosed
US-20120058427-A1 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2012-03-08 US disclosed
US-20110318687-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2011-12-29 US disclosed
US-20110269072-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE SAME FUJIFILM CORPORATION (JP) 2011-11-03 US disclosed
US-20110236828-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2011-09-29 US disclosed
US-20110223536-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2011-09-15 US disclosed
US-20110183258-A1 POSITIVE RESIST COMPOSITION, PATTERN FORMING METHOD USING THE COMPOSITION, AND COMPOUND FOR USE IN THE COMPOSITION FUJIFILM CORPORATION (JP) 2011-07-28 US disclosed
US-20110143280-A1 POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2011-06-16 US disclosed
US-20110136062-A1 POSITIVE PHOTOSENSITIVE COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2011-06-09 US disclosed