Predicted protein targets (top 19)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 7/20 | 0.58 |
| ▸ | TSHR | P16473 | 2/20 | 0.55 |
| ▸ | TDP1 | Q9NUW8 | 2/20 | 0.55 |
| ▸ | DHFR | P00374 | 1/20 | 0.55 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.55 |
| ▸ | EPHX2 | P34913 | 1/20 | 0.55 |
| ▸ | CA1 | P00915 | 3/20 | 0.52 |
| ▸ | CA2 | P00918 | 3/20 | 0.52 |
| ▸ | MAPT | P10636 | 1/20 | 0.52 |
| ▸ | CA12 | O43570 | 2/20 | 0.50 |
| ▸ | CA9 | Q16790 | 2/20 | 0.50 |
| ▸ | RAB9A | P51151 | 2/20 | 0.49 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.49 |
| ▸ | FBP1 | P09467 | 1/20 | 0.47 |
| ▸ | LMNA | P02545 | 2/20 | 0.47 |
| ▸ | MEN1 | O00255 | 1/20 | 0.47 |
| ▸ | ALB | P02768 | 1/20 | 0.46 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.46 |
| ▸ | AKT1 | P31749 | 2/20 | 0.46 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Stearylsulfamide SCHEMBL5731325 | 1.00 | ALDH1A1 (0.58) | ALDH1A1TSHRTDP1DHFRSMN1; SMN2 | |
| Stearylsulfamide SCHEMBL17981340 | 1.00 | ALDH1A1 (0.58) | ALDH1A1TSHRTDP1DHFRSMN1; SMN2 | |
| Stearylsulfamide SCHEMBL15335 | 1.00 | ALDH1A1 (0.58) | ALDH1A1TSHRTDP1DHFRSMN1; SMN2 | |
| Stearylsulfamide SCHEMBL2714792 | 0.99 | ALDH1A1 (0.57) | ALDH1A1TSHRTDP1DHFRSMN1; SMN2 | |
| Stearylsulfamide SCHEMBL4663113 | 0.99 | ALDH1A1 (0.57) | ALDH1A1TSHRTDP1DHFRSMN1; SMN2 | |
| Stearylsulfamide SCHEMBL1392023 | 0.99 | ALDH1A1 (0.57) | ALDH1A1TSHRTDP1DHFRSMN1; SMN2 | |
| Stearylsulfamide SCHEMBL9070453 | 0.99 | ALDH1A1 (0.57) | ALDH1A1TSHRTDP1DHFRSMN1; SMN2 | |
| Stearylsulfamide SCHEMBL322075 | 0.99 | ALDH1A1 (0.57) | ALDH1A1TSHRTDP1DHFRSMN1; SMN2 | |
| Stearylsulfamide SCHEMBL2367792 | 0.99 | ALDH1A1 (0.57) | ALDH1A1TSHRTDP1DHFRSMN1; SMN2 | |
| Stearylsulfamide SCHEMBL7583057 | 0.99 | ALDH1A1 (0.57) | ALDH1A1TSHRTDP1DHFRSMN1; SMN2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 193 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11656548-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, mask blank with resist film, method for producing photomask, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2023-05-23 | — | — | US | disclosed |
| US-11656548-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, mask blank with resist film, method for producing photomask, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2023-05-23 | — | — | US | disclosed |
| US-20200319551-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, MASK BLANK WITH RESIST FILM, METHOD FOR PRODUCING PHOTOMASK, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2020-10-08 | — | — | US | disclosed |
| US-9915870-B2 | Pattern forming method, composition kit and resist film, and method for producing electronic device using them, and electronic device | FUJIFILM CORPORATION (JP) | 2018-03-13 | — | — | US | disclosed |
| US-9915870-B2 | Pattern forming method, composition kit and resist film, and method for producing electronic device using them, and electronic device | FUJIFILM CORPORATION (JP) | 2018-03-13 | — | — | US | disclosed |
| US-9897922-B2 | Method of forming pattern and developer for use in the method | FUJIFILM CORPORATION (JP) | 2018-02-20 | — | — | US | disclosed |
| US-9897922-B2 | Method of forming pattern and developer for use in the method | FUJIFILM CORPORATION (JP) | 2018-02-20 | — | — | US | disclosed |
| US-20170102618-A1 | METHOD OF FORMING PATTERN | FUJIFILM CORPORATION (JP) | 2017-04-13 | — | — | US | disclosed |
| US-20170102618-A1 | METHOD OF FORMING PATTERN | FUJIFILM CORPORATION (JP) | 2017-04-13 | — | — | US | disclosed |
| US-9612535-B2 | Pattern forming method, electron beam- or extreme ultraviolet-sensitive resin composition, resist film using the same, method of manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2017-04-04 | — | — | US | disclosed |
| US-20090087784-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2009-04-02 | — | — | US | disclosed |
| EP-2034361-A2 | Photosensitive composition, compound for use in the photosensitive composition and pattern forming method using the photosensitive composition | Fujifilm Corporation (JP) | 2009-03-11 | — | — | EP | disclosed |
| US-20090035692-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING MEHTOD | FUJIFILM CORPORATION (JP) | 2009-02-05 | — | — | US | disclosed |
| US-20090035692-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING MEHTOD | FUJIFILM CORPORATION (JP) | 2009-02-05 | — | — | US | disclosed |
| US-20080248419-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-10-09 | — | — | US | disclosed |
| US-20080248419-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-10-09 | — | — | US | disclosed |
| US-20080085468-A1 | microlithography; ultrafine processing of semiconductor using electron beam, X-ray or deep UV; high sensitivity, high resolution and good line edge roughness; suppression of vaporized outgas; a polystyrene with an acid-decomposable group; 10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate | FUJIFILM CORPORATION (JP) | 2008-04-10 | — | — | US | disclosed |
| US-20080085468-A1 | microlithography; ultrafine processing of semiconductor using electron beam, X-ray or deep UV; high sensitivity, high resolution and good line edge roughness; suppression of vaporized outgas; a polystyrene with an acid-decomposable group; 10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate | FUJIFILM CORPORATION (JP) | 2008-04-10 | — | — | US | disclosed |
| US-20080081282-A1 | RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-04-03 | — | — | US | disclosed |
| US-20080081282-A1 | RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-04-03 | — | — | US | disclosed |