⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL472237 | 0.75 | — | — | |
| SCHEMBL2524722 | 0.75 | — | — | |
| SCHEMBL6854870 | 0.75 | — | — | |
| SCHEMBL29929445 | 0.71 | — | — | |
| SCHEMBL34398 | 0.71 | — | — | |
| SCHEMBL29382254 | 0.71 | — | — | |
| SCHEMBL11654272 | 0.71 | — | — | |
| SCHEMBL1902881 | 0.71 | — | — | |
| SCHEMBL29833055 | 0.71 | — | — | |
| SCHEMBL1394687 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 44 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-6962840-B2 | Method of forming MOS transistor | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2005-11-08 | — | — | US | claimed |
| US-6869835-B2 | Method of forming MOS transistor | SAMSUNG ELECTRONICS, CO., LTD (KR) | 2005-03-22 | — | — | US | claimed |
| US-6765255-B2 | Semiconductor device having metal-insulator-metal capacitor and fabrication method thereof | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2004-07-20 | — | — | US | claimed |
| US-20040048427-A1 | Method of forming MOS transistor | SAMSUNG ELECTRONICS CO., INC. | 2004-03-11 | — | — | US | claimed |
| US-20040048435-A1 | Method of forming MOS transistor | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2004-03-11 | — | — | US | claimed |
| US-20030183862-A1 | Semiconductor device having metal-insulator-metal capacitor and fabrication method thereof | SAMSUNG ELECTRONICS CO., LTD. | 2003-10-02 | — | — | US | claimed |
| US-6417012-B1 | Method of forming ferroelectric capacitor in semiconductor device | HYNIX SEMICONDUCTOR INC. (KR) | 2002-07-09 | — | — | US | claimed |
| US-20020072192-A1 | Method of forming ferroelectric capacitor in semiconductor device | HYNIX SEMICONDUCTOR INC. (KR) | 2002-06-13 | — | — | US | claimed |
| US-5683614-A | FORMING A LAYERED PEROVSKITE BISMUTH-STRONTIUM-TANTALUM OXIDE FERROELECTRIC MATERIAL | SANDIA CORPORATION (US) | 1997-11-04 | — | — | US | claimed |
| US-11121139-B2 | Hafnium oxide and zirconium oxide based ferroelectric devices with textured iridium bottom electrodes | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2021-09-14 | — | — | US | disclosed |
| US-9842984-B2 | Piezoelectric element | Konica Minolta, Inc. (JP) | 2017-12-12 | — | — | US | disclosed |
| EP-2264795-B1 | Light emitting diode and manufacturing method thereof | LG ELECTRONICS INC (KR) | 2015-04-22 | — | — | EP | disclosed |
| US-20150084486-A1 | PIEZOELECTRIC ELEMENT | Konica Minolta, Inc. (JP) | 2015-03-26 | — | — | US | disclosed |
| US-8153527-B2 | Method for reducing sidewall etch residue | GLOBALFOUNDRIES SINGAPORE PTE. LTD. (SG) | 2012-04-10 | — | — | US | disclosed |
| US-20020024140-A1 | Semiconductor device | HITACHI, LTD. (JP) | 2002-02-28 | — | — | US | disclosed |
| US-20010051414-A1 | Semiconductor integrated circuit and method for manufacturing the same | TOSHIBA MEMORY CORPORATION (JP) | 2001-12-13 | — | — | US | disclosed |
| US-6210752-B1 | All-alkoxide synthesis of strontium-containing metal oxides | SANDIA CORPORATION | 2001-04-03 | — | — | US | disclosed |
| US-6153317-A | Perovskite phase thin films and method of making | SANDIA CORPORATION (US) | 2000-11-28 | — | — | US | disclosed |
| US-5683614-A | FORMING A LAYERED PEROVSKITE BISMUTH-STRONTIUM-TANTALUM OXIDE FERROELECTRIC MATERIAL | SANDIA CORPORATION (US) | 1997-11-04 | — | — | US | disclosed |
| US-5683614-A | FORMING A LAYERED PEROVSKITE BISMUTH-STRONTIUM-TANTALUM OXIDE FERROELECTRIC MATERIAL | SANDIA CORPORATION (US) | 1997-11-04 | — | — | US | disclosed |