⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL555378 | 0.67 | — | — | |
| SCHEMBL1103757 | 0.64 | — | — | |
| SCHEMBL495810 | 0.64 | — | — | |
| SCHEMBL20240781 | 0.59 | — | — | |
| SCHEMBL11015385 | 0.59 | — | — | |
| SCHEMBL28366335 | 0.59 | — | — | |
| SCHEMBL723226 | 0.57 | — | — | |
| SCHEMBL129384 | 0.56 | — | — | |
| SCHEMBL31337066 | 0.56 | — | — | |
| SCHEMBL130354 | 0.53 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-113314502-B | Integrated circuit device and method of forming the same | 台湾积体电路制造股份有限公司 | 2024-08-23 | — | — | CN | disclosed |
| US-8153348-B2 | Process sequence for formation of patterned hard mask film (RFP) without need for photoresist or dry etch | APPLIED MATERIALS, INC. (US) | 2012-04-10 | — | — | US | disclosed |
| US-7943531-B2 | Methods for forming a silicon oxide layer over a substrate | APPLIED MATERIALS, INC. (US) | 2011-05-17 | — | — | US | disclosed |
| US-20090208880-A1 | PROCESS SEQUENCE FOR FORMATION OF PATTERNED HARD MASK FILM (RFP) WITHOUT NEED FOR PHOTORESIST OR DRY ETCH | APPLIED MATERIALS, INC. (US) | 2009-08-20 | — | — | US | disclosed |
| US-20090104791-A1 | Methods for Forming a Silicon Oxide Layer Over a Substrate | APPLIED MATERIALS, INC. A DELAWARE CORPORATION (US) | 2009-04-23 | — | — | US | disclosed |
| US-7498273-B2 | Formation of high quality dielectric films of silicon dioxide for STI: usage of different siloxane-based precursors for harp II—remote plasma enhanced deposition processes | APPLIED MATERIALS, INC. (US) | 2009-03-03 | — | — | US | disclosed |
| US-20070281495-A1 | FORMATION OF HIGH QUALITY DIELECTRIC FILMS OF SILICON DIOXIDE FOR STI: USAGE OF DIFFERENT SILOXANE-BASED PRECURSORS FOR HARP II - REMOTE PLASMA ENHANCED DEPOSITION PROCESSES | APPLIED MATERIALS, INC. (US) | 2007-12-06 | — | — | US | disclosed |