SCHEMBL495810

SCHEMBL495810

CO[Si](OC)(OC)N(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1103757 0.75
SCHEMBL1143073 0.75
SCHEMBL555378 0.70
SCHEMBL11015385 0.69
SCHEMBL724457 0.67
SCHEMBL17797138 0.67
SCHEMBL31742440 0.65
SCHEMBL1585526 0.64
SCHEMBL1103751 0.64
SCHEMBL9463582 0.64

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 229 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-122071548-A Impact-resistant polypropylene and preparation method thereof 中国石油化工股份有限公司 2026-05-22 CN claimed
US-20250376758-A1 SELECTIVE DEPOSITION OF METAL-CONTAINING MATERIAL ASM IP HOLDING BV (NL) 2025-12-11 US claimed
US-20250336667-A1 AREA SELECTIVE DEPOSITION ASM IP HOLDING BV (NL) 2025-10-30 US claimed
US-20250333837-A1 METHODS OF FILLING A RECESSED FEATURE ON A SUBSTRATE EMPLOYING METAL SEQUENTIAL INFILTRATION SYNTHESIS PROCESSES ASM IP HOLDING BV (NL) 2025-10-30 US claimed
US-20250320604-A1 LOW TEMPERATURE PLASMA DEPOSITION OF SILICON-CONTAINING FILMS USING HYDROGEN PEROXIDE GELEST INC (US) 2025-10-16 US claimed
US-20250305131-A1 LOW TEMPERATURE THERMAL DEPOSITION OF SILICON-CONTAINING FILMS USING LOW WATER CONTENT HYDROGEN PEROXIDE GELEST, INC. 2025-10-02 US claimed
US-20250197991-A1 AREA SELECTIVE DEPOSITION ASM IP HOLDING B.V. (NL) 2025-06-19 US claimed
CN-109439269-B High-thermal-conductivity ultraviolet curing adhesive for potting optical fiber coil and preparation method thereof 中国船舶重工集团公司第七0七研究所 2020-04-24 CN claimed
US-10487169-B2 Manufacturing method for propylene block copolymer TOHO TITANIUM CO., LTD. (JP) 2019-11-26 US claimed
US-10479856-B2 Manufacturing method for propylene block copolymer TOHO TITANIUM CO., LTD. (JP) 2019-11-19 US claimed
CN-106008303-A Preparation method of 1-Boc-3-hydroxyl azetidine medical intermediate 苏州艾缇克药物化学有限公司 2016-10-12 CN claimed
CN-105419701-A Environment-friendly phenolic resin adhesive and preparation method thereof SUZHOU GAIDE FINE MAT CO LTD 2016-03-23 CN claimed
CN-105315954-A Novel UV photo-curing adhesive and preparation method thereof GUIDE SUZHOU FINE CHEMICAL CO LTD 2016-02-10 CN claimed
CN-1222063-C Lithium ion cell, electrode of lithium ion cell and its preparation method PULEAD TECHNOLOGY INDUSTRY CO (CN) 2005-10-05 CN claimed
US-6743737-B2 FORMING INTEGRATED CIRCUITS; PLASMA VAPOR DEPOSITION APPLIED MATERIALS, INC. 2004-06-01 US claimed
CN-1485940-A Lithium ion cell, electrode of lithium ion cell and its preparation method 北大先行科技产业有限公司 2004-03-31 CN claimed
US-20030054667-A1 Method of improving moisture resistance of low dielectric constant films APPLIED MATERIALS, INC. 2003-03-20 US claimed
US-6448187-B2 DEPOSITING A SILICON OXIDE FILM BY OXIDATION OF SILICON COMPOUND, EXPOSING TO WATER OR A HYDROPHOBIC-IMPARTING SURFACTANT SUCH AS HEXAMETHYLDISILAZANE AND CURING APPLIED MATERIALS, INC. 2002-09-10 US claimed
US-20010026849-A1 Method of improving moisture resistance of low dielectric constant films APPLIED MATERIALS, INC. 2001-10-04 US claimed
US-6245690-B1 EXPOSING PLASMA ENHANCED CHEMICAL VAPOR DEPOSITED FILM OF OXIDIZED ORGANOSILICON COMPOUND TO A HYDROPHOBIC-IMPARTING SURFACTANT SUCH AS HEXAMETHYLDISILAZANE PRIOR TO THERMALLY CURING TO CONTROL CARBON CONTENT IN DEPOSITED FILM APPLIED MATERIALS, INC. 2001-06-12 US claimed