SCHEMBL11085771

SCHEMBL11085771

FC(F)(F)C1(C(F)(F)F)NO1

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29031899 0.65
SCHEMBL1463006 0.58
SCHEMBL20342033 0.54
SCHEMBL1463009 0.54
SCHEMBL37265 0.54
SCHEMBL30917979 0.52
Lithium SCHEMBL30876778 0.52
SCHEMBL2179627 0.52
SCHEMBL9443616 0.52
SCHEMBL343526 0.50

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 35 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-115394641-A Nitrogen-containing compounds for etching semiconductor structures 乔治洛德方法研究和开发液化空气有限公司 2022-11-25 CN claimed
CN-107924842-B Nitrogen-containing compounds for etching semiconductor structures 乔治洛德方法研究和开发液化空气有限公司 2022-09-06 CN claimed
US-20190326126-A1 METHODS FOR MINIMIZING SIDEWALL DAMAGE DURING LOW K ETCH PROCESSES AIR LIQUIDE ELECTRONICS U.S. LP 2019-10-24 US claimed
US-10347498-B2 Methods of minimizing plasma-induced sidewall damage during low K etch processes L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE (FR) 2019-07-09 US claimed
US-10256109-B2 Nitrogen-containing compounds for etching semiconductor structures AMERICAN AIR LIQUIDE, INC. (US) 2019-04-09 US claimed
US-20180211845-A1 METHODS OF MINIMIZING PLASMA-INDUCED SIDEWALL DAMAGE DURING LOW K ETCH PROCESSES L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude (FR) 2018-07-26 US claimed
EP-3345211-A1 NITROGEN-CONTAINING COMPOUNDS FOR ETCHING SEMICONDUCTOR STRUCTURES L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude (FR) 2018-07-11 EP claimed
US-20170229316-A1 NITROGEN-CONTAINING COMPOUNDS FOR ETCHING SEMICONDUCTOR STRUCTURES AIR LIQUIDE AMERICAN (US) 2017-08-10 US claimed
US-9659788-B2 Nitrogen-containing compounds for etching semiconductor structures AMERICAN AIR LIQUIDE, INC. (US) 2017-05-23 US claimed
US-20170110336-A1 METHODS FOR MINIMIZING SIDEWALL DAMAGE DURING LOW K ETCH PROCESSES L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude (FR) 2017-04-20 US claimed
WO-2017040518-A1 NITROGEN-CONTAINING COMPOUNDS FOR ETCHING SEMICONDUCTOR STRUCTURES L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE (FR) 2017-03-09 WO claimed
US-20150371869-A1 NITROGEN-CONTAINING COMPOUNDS FOR ETCHING SEMICONDUCTOR STRUCTURES AMERICAN AIR LIQUIDE, INC. 2015-12-24 US claimed
EP-3345211-B1 NITROGEN-CONTAINING COMPOUNDS FOR ETCHING SEMICONDUCTOR STRUCTURES AIR LIQUIDE (FR) 2025-12-10 EP disclosed
US-20250239461-A1 ETCHING GAS MIXTURE AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE USING THE SAME SAMSUNG ELECTRONICS CO., LTD. (KR) 2025-07-24 US disclosed
US-12327731-B2 Etching gas mixture and method of manufacturing integrated circuit device using the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2025-06-10 US disclosed
US-20230274943-A1 ETCHING GAS MIXTURE AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE USING THE SAME SAMSUNG ELECTRONICS CO., LTD. (KR) 2023-08-31 US disclosed
US-4427693-A ANTIARTHRITIC AGENTS; ANALGESICS E. I. DU PONT DE NEMOURS AND COMPANY (US) 1984-01-24 US disclosed
EP-0055471-A1 Antiinflammatory 4,5-diaryl-alpha,alpha-bis(polyhalomethyl)-2-thiophenemethanamines E.I. DU PONT DE NEMOURS AND COMPANY (US) 1982-07-07 EP disclosed
US-4335136-A Anti-inflammatory 4,5-diaryl-α-(polyfluoroalkyl)-1H-pyrrole-2-methanamines E. I. DU PONT DE NEMOURS AND COMPANY (US) 1982-06-15 US disclosed
EP-0038536-A1 Antiinflammatory 4,5-diaryl-alpha-(polyfluoroalkyl)-1H-pyrrole-2-methanamines E.I. DU PONT DE NEMOURS AND COMPANY (US) 1981-10-28 EP disclosed