⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL12967601 | 0.87 | — | — | |
| SCHEMBL17936806 | 0.85 | — | — | |
| SCHEMBL1687752 | 0.85 | — | — | |
| SCHEMBL15681901 | 0.84 | SOAT2 (0.38) | — | |
| SCHEMBL15726654 | 0.84 | — | — | |
| SCHEMBL8125470 | 0.82 | — | — | |
| SCHEMBL14028991 | 0.81 | — | — | |
| SCHEMBL2611760 | 0.81 | — | — | |
| SCHEMBL111841 | 0.80 | — | — | |
| SCHEMBL12018664 | 0.80 | SOAT2 (0.40) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 116 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11703758-B2 | Photosensitive composition for EUV light, pattern forming method, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2023-07-18 | — | — | US | disclosed |
| US-11697754-B2 | Thermal conductive layer, photosensitive layer, photosensitive composition, manufacturing method for thermal conductive layer, and laminate and semiconductor device | FUJIFILM CORPORATION (JP) | 2023-07-11 | — | — | US | disclosed |
| US-11656548-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, mask blank with resist film, method for producing photomask, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2023-05-23 | — | — | US | disclosed |
| US-9958775-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, mask blanks including actinic ray-sensitive or radiation-sensitive film, pattern forming method and photomask | FUJIFILM CORPORATION (JP) | 2018-05-01 | — | — | US | disclosed |
| US-9904168-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, mask blank provided with actinic ray-sensitive or radiation-sensitive film, pattern forming method, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2018-02-27 | — | — | US | disclosed |
| US-9798234-B2 | Resin composition, resist film using same, resist-coated mask blank, resist pattern forming method, and photo mask | FUJIFILM CORPORATION (JP) | 2017-10-24 | — | — | US | disclosed |
| US-20170285482-A1 | ORGANIC PROCESSING LIQUID AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2017-10-05 | — | — | US | disclosed |
| US-9718901-B2 | Resin composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2017-08-01 | — | — | US | disclosed |
| US-9709891-B2 | Positive resist composition, resin used for the positive resist composition, compound used for synthesis of the resin and pattern forming method using the positive resist composition | FUJIFILM CORPORATION (JP) | 2017-07-18 | — | — | US | disclosed |
| US-20170168395-A1 | ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE FILM, MASK BLANK PROVIDED WITH ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-06-15 | — | — | US | disclosed |
| US-8088557-B2 | Method of forming patterns | FUJIFILM CORPORATION (JP) | 2012-01-03 | — | — | US | disclosed |
| US-20110318691-A1 | RESIST COMPOSITION FOR SEMICONDUCTOR, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2011-12-29 | — | — | US | disclosed |
| US-20110250543-A1 | PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2011-10-13 | — | — | US | disclosed |
| US-20110229832-A1 | PATTERN FORMING METHOD USING DEVELOPER CONTAINING ORGANIC SOLVENT AND RINSING SOLUTION FOR USE IN THE PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2011-09-22 | — | — | US | disclosed |
| US-20110159433-A1 | PHOTOSENSITIVE COMPOSITION, PATTERN-FORMING METHOD USING THE COMPOSITION, AND RESIN USED IN THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2011-06-30 | — | — | US | disclosed |
| US-20110102528-A1 | COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND INKJET RECORDING METHOD | FUJIFILM CORPORATION (JP) | 2011-05-05 | — | — | US | disclosed |
| US-20110076625-A1 | METHOD OF FORMING PATTERNS | FUJIFILM CORPORATION (JP) | 2011-03-31 | — | — | US | disclosed |
| US-20110020755-A1 | METHOD OF FORMING PATTERNS | FUJIFILM CORPORATION (JP) | 2011-01-27 | — | — | US | disclosed |
| US-20110014570-A1 | RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2011-01-20 | — | — | US | disclosed |
| US-20100015554-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2010-01-21 | — | — | US | disclosed |