SCHEMBL112073

SCHEMBL112073

CCC(C)C(=O)OC1C2CC3C(=O)OC1C3C2

nearest known ligand 0.33

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
HMGCR P04035 6/20 0.33
CYP3A4 P08684 6/20 0.31
LMNA P02545 5/20 0.31
HIF1A Q16665 4/20 0.31
TSHR P16473 4/20 0.31
SMN1; SMN2 Q16637 4/20 0.31
ABCB11 O95342 3/20 0.31
KDM4E B2RXH2 2/20 0.31
ITGB2 P05107 2/20 0.31
ICAM1 P05362 2/20 0.31
PGR P06401 2/20 0.31
ABCB1 P08183 2/20 0.31
ADORA3 P0DMS8 2/20 0.31
MAPT P10636 2/20 0.31
ADRB3 P13945 2/20 0.31
ALOX15 P16050 2/20 0.31
ITGAL P20701 2/20 0.31
TACR2 P21452 2/20 0.31
TBXA2R P21731 2/20 0.31
SLC6A2 P23975 2/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL785966 0.90 HMGCR (0.32) HMGCRCYP3A4LMNAHIF1ATSHR
SCHEMBL19052033 0.90
SCHEMBL6367234 0.89
SCHEMBL13222983 0.89
SCHEMBL11986000 0.88 NLRP3 (0.32)
SCHEMBL133380 0.88 NLRP3 (0.32)
SCHEMBL12973908 0.88 NLRP3 (0.37)
SCHEMBL21709895 0.88
SCHEMBL10820218 0.88
SCHEMBL14489054 0.87

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 874 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230350290-A1 PATTERN FORMING METHOD, KIT, AND RESIST COMPOSITION FUJIFILM CORPORATION (JP) 2023-11-02 US disclosed
US-11747727-B2 Chemical liquid, chemical liquid storage body, pattern forming method, and kit FUJIFILM CORPORATION (JP) 2023-09-05 US disclosed
WO-2023162838-A1 ACTIVE-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE-RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMATION METHOD AND ELECTRONIC DEVICE MANUFACTURING METHOD 富士フイルム株式会社 2023-08-31 WO disclosed
WO-2023162837-A1 POSITIVE ACTIVE-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE-RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMATION METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, AND COMPOUND 富士フイルム株式会社 2023-08-31 WO disclosed
US-20230148344-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, COMPOUND, AND METHOD FOR PRODUCING COMPOUND FUJIFILM CORPORATION (JP) 2023-05-11 US disclosed
US-20230135117-A1 SOLUTION, SOLUTION STORAGE BODY, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE FUJIFILM CORPORATION (JP) 2023-05-04 US disclosed
EP-4129974-A1 ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, METHOD FOR FORMING PATTERN, AND METHOD FOR PRODUCING ELECTRONIC DEVICE FUJIFILM Corporation (JP) 2023-02-08 EP disclosed
WO-2023008346-A1 ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, METHOD FOR FORMING PATTERN, AND METHOD FOR PRODUCING ELECTRONIC DEVICE 富士フイルム株式会社 2023-02-02 WO disclosed
WO-2023008347-A1 ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, METHOD FOR FORMING PATTERN, AND METHOD FOR PRODUCING ELECTRONIC DEVICE 富士フイルム株式会社 2023-02-02 WO disclosed
US-11561471-B2 Photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-01-24 US disclosed
US-7189492-B2 Photosensitive composition and pattern forming method using the same FUJI PHOTO FILM CO., LTD. (JP) 2007-03-13 US disclosed
US-20070054217-A1 Positive photosensitive composition and pattern-forming method using the same FUJI PHOTO FILM CO., LTD. 2007-03-08 US disclosed
US-7186495-B2 (Meth) acrylate derivative, polymer and photoresist composition having lactone structure, and method for forming pattern by using it NEC CORPORATION (JP) 2007-03-06 US disclosed
US-20070042290-A1 resin containing acrylic ester monomers capable of increasing solubility in alkali developer by action of acid, acid generator, aryldicycloalkylsulfonium compounds, and nonionic surfactant; semiconductors, integrated circuits FUJI PHOTO FILM CO., LTD. 2007-02-22 US disclosed
US-7179578-B2 Positive resist composition FUJI PHOTO FILM CO., LTD. (JP) 2007-02-20 US disclosed
US-7179578-B2 Positive resist composition FUJI PHOTO FILM CO., LTD. (JP) 2007-02-20 US disclosed
US-7179579-B2 Radiation-sensitive composition FUJI PHOTO FILM CO., LTD. (JP) 2007-02-20 US disclosed
US-7175963-B2 Chemical amplification type positive resist composition and a resin therefor SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-02-13 US disclosed
US-20070031757-A1 Positive photosensitive composition and method of pattern formation with the same FUJI PHOTO FILM CO., LTD. 2007-02-08 US disclosed
US-7157207-B2 Polymer, resist material and patterning processing SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-01-02 US disclosed