⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL10019858 | 0.85 | HSD17B10 (0.31) | — | |
| SCHEMBL10019862 | 0.80 | HSD17B10 (0.33) | — | |
| SCHEMBL14877470 | 0.79 | IMPDH2 (0.33) | — | |
| SCHEMBL11890217 | 0.79 | — | — | |
| SCHEMBL23963307 | 0.79 | — | — | |
| SCHEMBL6520950 | 0.77 | — | — | |
| SCHEMBL6519414 | 0.77 | — | — | |
| SCHEMBL12089524 | 0.77 | HSD17B10 (0.34) | — | |
| SCHEMBL28919639 | 0.77 | IMPDH2 (0.32) | — | |
| SCHEMBL24105794 | 0.77 | IMPDH2 (0.39) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20170059992-A1 | RESIST PATTERN-FORMING METHOD AND CHEMICALLY AMPLIFIED RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2017-03-02 | — | — | US | disclosed |
| US-9291904-B2 | Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method | FUJIFILM CORPORATION (JP) | 2016-03-22 | — | — | US | disclosed |
| US-9250530-B2 | — | — | 2016-02-02 | — | — | US | disclosed |
| US-8951718-B2 | Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method | FUJIFILM CORPORATION (JP) | 2015-02-10 | — | — | US | disclosed |
| US-8709704-B2 | Pattern forming method using developer containing organic solvent and rinsing solution for use in the pattern forming method | FUJIFILM CORPORATION (JP) | 2014-04-29 | — | — | US | disclosed |
| US-20120315449-A1 | PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2012-12-13 | — | — | US | disclosed |
| US-20120058436-A1 | PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2012-03-08 | — | — | US | disclosed |
| US-20110229832-A1 | PATTERN FORMING METHOD USING DEVELOPER CONTAINING ORGANIC SOLVENT AND RINSING SOLUTION FOR USE IN THE PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2011-09-22 | — | — | US | disclosed |