SCHEMBL112753

SCHEMBL112753

O=C1CCCC=C1C(=O)C[S+]1CCCC1

nearest known ligand 0.34

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
GSTP1 P09211 2/20 0.34
TP53 P04637 1/20 0.33
HIF1A Q16665 1/20 0.31
HDAC3 O15379 1/20 0.30
HDAC4 P56524 1/20 0.30
HDAC1 Q13547 1/20 0.30
HDAC7 Q8WUI4 1/20 0.30
HDAC2 Q92769 1/20 0.30
HDAC8 Q9BY41 1/20 0.30
HDAC6 Q9UBN7 1/20 0.30
HDAC5 Q9UQL6 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL108188 0.72 HDAC2 (0.46) HDAC3HDAC4HDAC1HDAC7HDAC2
SCHEMBL747380 0.70 HIF1A (0.38) GSTP1TP53HIF1AHDAC3HDAC4
SCHEMBL11883308 0.69 HIF1A (0.37) GSTP1TP53HIF1AHDAC3HDAC4
SCHEMBL10933450 0.69 GSTP1 (0.40) GSTP1TP53HIF1AHDAC3HDAC4
SCHEMBL3369781 0.67 MAPT (0.37) GSTP1TP53HIF1AHDAC3HDAC4
SCHEMBL12204652 0.66 GSTP1 (0.39) GSTP1TP53
SCHEMBL6575838 0.65 HDAC4 (0.41) GSTP1TP53HIF1AHDAC3HDAC4
SCHEMBL5799259 0.64 GSTP1 (0.44) GSTP1TP53
SCHEMBL12705737 0.64
SCHEMBL30571443 0.63 HIF1A (0.36) GSTP1TP53HIF1AHDAC3HDAC4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8778593-B2 Chemical amplification resist composition, and resist film, resist-coated mask blank, resist pattern forming method and photomask each using the composition FUJIFILM CORPORATION (JP) 2014-07-15 US disclosed
US-20130029254-A1 CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND RESIST FILM, RESIST-COATED MASK BLANK, RESIST PATTERN FORMING METHOD AND PHOTOMASK EACH USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2013-01-31 US disclosed
US-20120058436-A1 PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2012-03-08 US disclosed