SCHEMBL1134052

SCHEMBL1134052

CC(C)(C)c1ccc([I+]c2ccc(C(C)(C)C)cc2)cc1.CCCCCC(F)C(F)(F)C(F)(F)S(=O)(=O)[O-]

nearest known ligand 0.33

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
KCNH2 Q12809 7/20 0.33
ALDH1A1 P00352 2/20 0.32
TP53 P04637 1/20 0.32
SMN1; SMN2 Q16637 1/20 0.32
GRIA4 P48058 1/20 0.32
NR1I2 O75469 1/20 0.32
STS P08842 2/20 0.31
HSD11B1 P28845 1/20 0.31
HDAC3 O15379 1/20 0.31
HDAC1 Q13547 1/20 0.31
HDAC2 Q92769 1/20 0.31
SIGMAR1 Q99720 2/20 0.30
LMNA P02545 1/20 0.30
HSD17B10 Q99714 1/20 0.30
FDFT1 P37268 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5169076 0.81 ALDH1A1 (0.38) ALDH1A1TP53SMN1; SMN2HSD11B1LMNA
SCHEMBL18008967 0.79 NR1I2 (0.36) KCNH2TP53NR1I2
Potassium Ion SCHEMBL18008081 0.79 MAPT (0.34) KCNH2TP53NR1I2
Potassium Ion SCHEMBL18008099 0.78 MAPT (0.37) KCNH2TP53NR1I2
SCHEMBL18008459 0.78 NR1I2 (0.38) KCNH2TP53NR1I2
Lithium Ion SCHEMBL18008126 0.78 MAPT (0.37) KCNH2TP53NR1I2
Lithium Ion SCHEMBL18008804 0.78 MAPT (0.37) KCNH2TP53NR1I2
SCHEMBL18008409 0.78 NR1I2 (0.38) KCNH2TP53NR1I2
Potassium Ion SCHEMBL18008748 0.78 MAPT (0.37) KCNH2TP53NR1I2
Lithium Ion SCHEMBL18007839 0.78 MAPT (0.37) KCNH2TP53NR1I2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2285845-B1 LOW OUTGASSING PHOTORESIST COMPOSITIONS IBM (US) 2013-09-04 EP disclosed
US-7951525-B2 Low outgassing photoresist compositions INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2011-05-31 US disclosed
EP-2285845-A1 LOW OUTGASSING PHOTORESIST COMPOSITIONS International Business Machines Corporation (US) 2011-02-23 EP disclosed
US-20100062368-A1 LOW OUTGASSING PHOTORESIST COMPOSITIONS INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2010-03-11 US disclosed
WO-2010025983-A1 LOW OUTGASSING PHOTORESIST COMPOSITIONS INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2010-03-11 WO disclosed
US-7479364-B2 lithographic photoresist; deep UV, x-ray, electon beam: alpha-cyano- or an alpha-trifluoro methacrylate monomer and a vinyl ether monomer; 157 nm. INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2009-01-20 US disclosed
US-7358027-B2 Used to generate resist images on a substrate, i.e., in the manufacture of integrated circuits INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2008-04-15 US disclosed
US-20080085473-A1 lithographic photoresist; deep UV, x-ray, electon beam: alpha-cyano- or an alpha-trifluoro methacrylate monomer and a vinyl ether monomer; 157 nm. GLOBALFOUNDRIES U.S. INC. 2008-04-10 US disclosed
US-20030186160-A1 Used to generate resist images on a substrate, i.e., in the manufacture of integrated circuits GLOBALFOUNDRIES U.S. INC. 2003-10-02 US disclosed