⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL706060 | 0.78 | — | — | |
| SCHEMBL31624444 | 0.72 | — | — | |
| SCHEMBL7103785 | 0.69 | — | — | |
| SCHEMBL109021 | 0.69 | — | — | |
| SCHEMBL6294771 | 0.67 | — | — | |
| Butane SCHEMBL3840388 | 0.67 | — | — | |
| Ammonia Solution, Strong SCHEMBL28820250 | 0.65 | — | — | |
| SCHEMBL18813467 | 0.65 | — | — | |
| SCHEMBL18813468 | 0.65 | — | — | |
| SCHEMBL5698800 | 0.65 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 36 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8951342-B2 | Methods for using porogens for low k porous organosilica glass films | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2015-02-10 | — | — | US | claimed |
| US-20130260575-A1 | SILICON PRECURSORS AND COMPOSITIONS COMPRISING SAME FOR DEPOSITING LOW DIELECTRIC CONSTANT FILMS | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2013-10-03 | — | — | US | claimed |
| US-20130095255-A1 | Porogens, Porogenated Precursors and Methods for Using the Same to Provide Porous Organosilica Glass Films with Low Dielectric Constants | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2013-04-18 | — | — | US | claimed |
| US-20120282415-A1 | Methods For Using Porogens For Low K Porous Organosilica Glass Films | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2012-11-08 | — | — | US | claimed |
| EP-1354980-B1 | Method for forming a porous SiOCH layer. | AIR PROD & CHEM (US) | 2011-02-23 | — | — | EP | claimed |
| EP-2116632-A2 | Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants | Air Products and Chemicals, Inc. (US) | 2009-11-11 | — | — | EP | claimed |
| US-20080268177-A1 | Porogens, Porogenated Precursors and Methods for Using the Same to Provide Porous Organosilica Glass Films with Low Dielectric Constants | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2008-10-30 | — | — | US | claimed |
| US-7384471-B2 | Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2008-06-10 | — | — | US | claimed |
| US-20030232137-A1 | Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants | VERSUM MATERIALS US, LLC | 2003-12-18 | — | — | US | claimed |
| EP-1354980-A1 | Method for forming a porous SiOCH layer. | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2003-10-22 | — | — | EP | claimed |
| US-9324571-B2 | Post treatment for dielectric constant reduction with pore generation on low K dielectric films | APPLIED MATERIALS, INC. (US) | 2016-04-26 | — | — | US | disclosed |
| US-20150380265-A1 | POST TREATMENT FOR DIELECTRIC CONSTANT REDUCTION WITH PORE GENERATION ON LOW K DIELECTRIC FILMS | APPLIED MATERIALS, INC. (US) | 2015-12-31 | — | — | US | disclosed |
| US-9061317-B2 | Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2015-06-23 | — | — | US | disclosed |
| US-8951342-B2 | Methods for using porogens for low k porous organosilica glass films | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2015-02-10 | — | — | US | disclosed |
| WO-2014158351-A1 | POST TREATMENT FOR CONSTANT REDUCTION WITH PORE GENERATION ON LOW-K DIELECTRIC FILMS | APPLIED MATERIALS, INC. (US) | 2014-10-02 | — | — | WO | disclosed |
| CN-1698017-A | Radiation-curing composition, method for storing same, method for forming cured film, method for forming pattern, method for using pattern, electronic component, and optical waveguide | HITACHI CHEMICAL CO LTD (JP) | 2005-11-16 | — | — | CN | disclosed |
| US-20040197474-A1 | Method for enhancing deposition rate of chemical vapor deposition films | VERSUM MATERIALS US, LLC | 2004-10-07 | — | — | US | disclosed |
| EP-1464726-A2 | CVD method for forming a porous low dielectric constant SiOCH film | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2004-10-06 | — | — | EP | disclosed |
| US-20030232137-A1 | Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants | VERSUM MATERIALS US, LLC | 2003-12-18 | — | — | US | disclosed |
| EP-1354980-A1 | Method for forming a porous SiOCH layer. | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2003-10-22 | — | — | EP | disclosed |