SCHEMBL1144112

SCHEMBL1144112

CC(C)NC(C)C.[SiH4]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2020 0.94
SCHEMBL27928984 0.94 TDP1 (1.00)
SCHEMBL1332279 0.94
Hydrochloric Acid SCHEMBL4464160 0.89
SCHEMBL39184 0.89
SCHEMBL23451826 0.89
SCHEMBL381805 0.89
Ethane SCHEMBL22032756 0.89
Fluoride SCHEMBL20394054 0.89 TDP1 (0.89)
SCHEMBL4800423 0.89

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 51 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-3535436-B1 PRECURSORS AND FLOWABLE CVD METHODS FOR MAKING LOW-K FILMS TO FILL SURFACE FEATURES VERSUM MAT US LLC (US) 2021-05-12 EP claimed
EP-3395822-B1 ORGANOAMINOSILANES AND METHODS FOR MAKING SAME VERSUM MAT US LLC (US) 2020-03-25 EP claimed
CN-110722409-A High-precision ball processing method 浦江县承煌光电技术有限公司 2020-01-24 CN claimed
CN-106629759-B A kind of synthetic method of AEL types silicoaluminophosphamolecular molecular sieves 兰州理工大学 2018-10-02 CN claimed
CN-106629759-A Synthetic method of AEL type silicoaluminophosphate molecular sieve 兰州理工大学 2017-05-10 CN claimed
CN-101225511-A Thermal etch process for cleaning CVD chambers AIR PROD & CHEM (US) 2008-07-23 CN claimed
US-20080142046-A1 Thermal F2 etch process for cleaning CVD chambers AIR PRODUCTS AND CHEMICALS, INC. 2008-06-19 US claimed
EP-1932941-A1 Thermal etch process for cleaning CVD chambers Air Products and Chemicals, Inc. (US) 2008-06-18 EP claimed
US-20250324733-A1 SEMICONDUCTOR STRUCTURE TAIWAN SEMICONDUCTOR MFG CO LTD (TW) 2025-10-16 US disclosed
US-12402394-B2 Semiconductor structure TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (TW) 2025-08-26 US disclosed
CN-118184688-A Preparation method of diisopropylamine silane 铜陵安德科铭电子材料科技有限公司 2024-06-14 CN disclosed
CN-117510533-B Preparation process and preparation system of diisopropylamine silane 全椒亚格泰电子新材料科技有限公司 2024-04-05 CN disclosed
CN-117747396-A Substrate processing apparatus, plasma generating method, method for manufacturing semiconductor device, and recording medium 株式会社国际电气 2024-03-22 CN disclosed
US-20240047272-A1 SEMICONDUCTOR STRUCTURE TAIWAN SEMICONDUCTOR MFG CO LTD (TW) 2024-02-08 US disclosed
US-20100055347-A1 ACTIVATED GAS INJECTOR, FILM DEPOSITION APPARATUS, AND FILM DEPOSITION METHOD TOKYO ELECTRON LIMITED 2010-03-04 US disclosed
US-20090324828-A1 FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND COMPUTER READABLE STORAGE MEDIUM TOKYO ELECTRON LIMITED (JP) 2009-12-31 US disclosed
EP-2138604-A2 Film deposition apparatus, film deposition method, and computer readable storage medium Tokyo Electron Limited (JP) 2009-12-30 EP disclosed
CN-101225511-A Thermal etch process for cleaning CVD chambers AIR PROD & CHEM (US) 2008-07-23 CN disclosed
US-20080142046-A1 Thermal F2 etch process for cleaning CVD chambers AIR PRODUCTS AND CHEMICALS, INC. 2008-06-19 US disclosed
EP-1932941-A1 Thermal etch process for cleaning CVD chambers Air Products and Chemicals, Inc. (US) 2008-06-18 EP disclosed