SCHEMBL1144948

SCHEMBL1144948

CC(C)(CO)N(CCO)CCO

nearest known ligand 0.38

Predicted protein targets (top 4)

geneUniProtsupporting neighboursconfidence
MAPT P10636 1/20 0.38
ALDH1A1 P00352 2/20 0.32
MEN1 O00255 1/20 0.30
KMT2A Q03164 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Formaldehyde SCHEMBL28199185 0.92 MAPT (0.33) MAPTMEN1KMT2A
SCHEMBL20376445 0.80 ALDH1A1 (0.31) ALDH1A1
SCHEMBL6654058 0.80 MAPT (0.36) MAPTALDH1A1
SCHEMBL21203232 0.78 MAPT (0.35) MAPT
SCHEMBL5009792 0.78 MAPT (0.35) MAPT
SCHEMBL9755262 0.77 MAPT (0.38) MAPTALDH1A1
SCHEMBL115482 0.75 MAPT (0.42) MAPTALDH1A1
SCHEMBL8144963 0.74 MAPT (0.43) MAPT
SCHEMBL5965821 0.74 MAPT (0.32) MAPTALDH1A1
SCHEMBL15081060 0.74 MAPT (0.32) MAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 59 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12359125-B2 Silicon etchant composition, pattern formation method and manufacturing method of array substrate using the etchant composition, and array substrate manufactured therefrom DONGWOO FINE-CHEM CO., LTD. (KR) 2025-07-15 US claimed
US-20250026960-A1 POLISHING SLURRY COMPOSITION KCTECH CO.,LTD. (KR) 2025-01-23 US claimed
CN-118339245-A Polishing slurry composition 凯斯科技股份有限公司 2024-07-12 CN claimed
CN-114231288-B Silicon etching liquid composition, pattern forming method, array substrate manufacturing method, and array substrate 东友精细化工有限公司 2023-12-26 CN claimed
WO-2023121037-A1 POLISHING SLURRY COMPOSITION 주식회사 케이씨텍 2023-06-29 WO claimed
CN-111492024-B Polishing slurry composition for STI process 斯科技股份有限公司 2022-12-30 CN claimed
US-11384255-B2 Polishing slurry composition for STI process KCTECH CO., LTD. (KR) 2022-07-12 US claimed
CN-114231288-A Silicon etching liquid composition, pattern forming method, array substrate manufacturing method, and array substrate 东友精细化工有限公司 2022-03-25 CN claimed
US-20220073819-A1 SILICON ETCHANT COMPOSITION, PATTERN FORMATION METHOD AND MANUFACTURING METHOD OF ARRAY SUBSTRATE USING THE ETCHANT COMPOSITION, AND ARRAY SUBSTRATE MANUFACTURED THEREFROM DONGWOO FINE-CHEM CO., LTD. (KR) 2022-03-10 US claimed
US-20210163785-A1 POLISHING SLURRY COMPOSITION FOR STI PROCESS KCTECH CO., LTD. (KR) 2021-06-03 US claimed
US-20210079262-A1 POLISHING SLURRY COMPOSITION FOR STI PROCESS KCTECH CO., LTD. (KR) 2021-03-18 US claimed
CN-111511856-A Polishing slurry composition for STI process 斯科技股份有限公司 2020-08-07 CN claimed
CN-111492024-A Polishing slurry composition for STI process 斯科技股份有限公司 2020-08-04 CN claimed
US-20190316003-A1 SLURRY COMPOSITION FOR POLISHING HIGH STEPPED REGION KCTECH CO., LTD. (KR) 2019-10-17 US claimed
US-20110124195-A1 Chemical Mechanical Polishing Composition Containing Polysilicon Polish Finisher TECHNO SEMICHEM CO., LTD. (KR) 2011-05-26 US claimed
US-20110045741-A1 Auto-Stopping Abrasive Composition for Polishing High Step Height Oxide Layer TECHNO SEMICHEM CO., LTD. (KR) 2011-02-24 US claimed
WO-2006115393-A1 AUTO-STOPPING ABRASIVE COMPOSITION FOR POLISHING HIGH STEP HEIGHT OXIDE LAYER TECHNO SEMICHEM CO., LTD. (KR) 2006-11-02 WO claimed
US-20250236792-A1 ETCHANT COMPOSITION FOR ETCHING SILICON AND METHOD OF FORMING PATTERN USING THE SAME DONGWOO FINE-CHEM CO., LTD. (KR) 2025-07-24 US disclosed
EP-1629103-A2 PLANT FATTY ACID AMIDE HYDROLASES The Samuel Roberts Noble Foundation, Inc. (US) 2006-03-01 EP disclosed
WO-2005001100-A2 PLANT FATTY ACID AMIDE HYDROLASES THE SAMUEL ROBERTS NOBLE FOUNDATION, INC. (US) 2005-01-06 WO disclosed